NXP USA Inc. BC337-25,112

Name: BC337-25,112
Brand: NXP USA Inc.
SKU: 2466983-BC337-25,112
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC337-25,112

Manufacturer:: NXP USA Inc.

Ventron No:: 2466983-BC337-25,112

Description:: TRANS NPN 45V 0.5A TO92

ECAD Model:

Datasheet:: BC817(W), BC337

Specifications

NXP USA Inc. BC337-25,112 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BC337-25,112.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2009
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
250
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC337
Pin Count
3
JESD-30 Code
O-PBCY-W3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
Power Dissipation-Max (Abs)
0.625W
VCEsat-Max
0.7 V
RoHS Status
ROHS3 Compliant

Description

BC337-25,112 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.

BC337-25,112 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz

BC337-25,112 Applications
There are a lot of NXP USA Inc.
BC337-25,112 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC337-25,112 More Descriptions

500 Ma 45 V NPN Si Small Signal Transistor TO-92
TRANS NPN 45V 0.5A TO92
NPN GENERAL PURPOSE TRANSISTO
IC AMP CLASS D STEREO 2W 30TSSOP

Certification