Fairchild/ON Semiconductor BC32825
- Part Number:
- BC32825
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467430-BC32825
- Description:
- TRANS PNP 25V 0.8A TO-92
- ECAD Model:
-
- Datasheet:
- BC32825
Fairchild/ON Semiconductor BC32825 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC32825.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)25V
- Current - Collector (Ic) (Max)800mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
BC32825 Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.As a result, the part has a transition frequency of 100MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BC32825 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC32825 Applications
There are a lot of Rochester Electronics, LLC
BC32825 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.As a result, the part has a transition frequency of 100MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BC32825 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC32825 Applications
There are a lot of Rochester Electronics, LLC
BC32825 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC32825 More Descriptions
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 160 @ 100mA 1V 800mA 625mW 100MHz
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
PNP Epitaxial Silicon Transistor 50V 800mA TO-92
TRANS GP BJT PNP 25V 0.8A 3PIN TO-92
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor; Transistor Type:Bipolar; Package/Case:TO-92; Leaded Process Compatible:Yes; Current Rating:-800mA; Voltage Rating:-30V ;RoHS Compliant: Yes
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
PNP Epitaxial Silicon Transistor 50V 800mA TO-92
TRANS GP BJT PNP 25V 0.8A 3PIN TO-92
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor; Transistor Type:Bipolar; Package/Case:TO-92; Leaded Process Compatible:Yes; Current Rating:-800mA; Voltage Rating:-30V ;RoHS Compliant: Yes
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
22 January 2024
LM317T Voltage Regulator: Functions, Usage, Applications and LM317T vs LM317
Ⅰ. Overview of LM317TⅡ. What functions does LM317T have?Ⅲ. Technical parameters of LM317T voltage regulatorⅣ. Circuit of LM317T voltage regulatorⅤ. What is the difference between LM317T and LM317?Ⅵ.... -
23 January 2024
IRF3205 MOSFET Specifications, Package, Working Principle and Applications
Ⅰ. Overview of IRF3205 MOSFETⅡ. Symbol, footprint and pin configuration of IRF3205 MOSFETⅢ. Specifications of IRF3205 MOSFETⅣ. Package of IRF3205 MOSFETⅤ. Working principle and structure of IRF3205 MOSFETⅥ.... -
23 January 2024
Get to Know the TDA2822M Audio Amplifier
Ⅰ. What is TDA2822M?Ⅱ. What are the features of TDA2822M?Ⅲ. Specifications of TDA2822MⅣ. Structure and working principle of TDA2822MⅤ. TDA2822M schematic diagramⅥ. What are the applications of TDA2822M?Ⅶ.... -
24 January 2024
ESP8266 Characteristics, Structure, Application Fields and Other Details
Ⅰ. What is ESP8266?Ⅱ. Characteristics of ESP8266 moduleⅢ. Hardware interface of ESP8266Ⅳ. Development method of ESP8266Ⅴ. Structure of ESP8266Ⅵ. What are the working modes of ESP8266?Ⅶ. What are...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.