Fairchild/ON Semiconductor BC32725TA

Name: BC32725TA
Brand: Fairchild/ON Semiconductor
SKU: 3585089-BC32725TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC32725TA

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3585089-BC32725TA

Description:: TRANS PNP 45V 0.8A TO-92

ECAD Model:

Datasheet:: BC327

Specifications

Fairchild/ON Semiconductor BC32725TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC32725TA.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240.007063mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
-800mA
Frequency
100MHz
Base Part Number
BC327
Number of Elements
1
Element Configuration
Single
Current
500mA
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
-45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-700mV
Max Breakdown Voltage
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC32725TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.With a collector emitter saturation voltage of -700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -800mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 800mA volts at its maximum.

BC32725TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 100MHz

BC32725TA Applications
There are a lot of ON Semiconductor
BC32725TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC32725TA More Descriptions

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
45V 625mW 160@100mA,1V 800mA PNP TO-92 Bipolar Transistors - BJT ROHS
BC327 Series 45 V 800 mA Through Hole PNP Epitaxial Silicon Transistor - TO-92-3
Bipolar Transistors - BJT PNP -45V -800mA HFE/400
Trans GP BJT PNP 45V 0.8A 625mW 3-Pin TO-92 Fan-Fold
BIPOLAR TRANSISTOR; Transistor Polarity:; BIPOLAR TRANSISTOR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:625mW; DC Collector Current:-800mA; DC Current Gain hFE:400; Operating Temperature Max:150°C

Certification