Fairchild/ON Semiconductor BC32725
- Part Number:
- BC32725
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467270-BC32725
- Description:
- TRANS PNP 45V 0.8A TO-92
- Datasheet:
- BC32725
Fairchild/ON Semiconductor BC32725 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC32725.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee1
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)800mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
BC32725 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BC32725 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC32725 Applications
There are a lot of Rochester Electronics, LLC
BC32725 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BC32725 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC32725 Applications
There are a lot of Rochester Electronics, LLC
BC32725 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC32725 More Descriptions
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 160 @ 100mA 1V 800mA 625mW 100MHz
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors - BJT PNP -45V -800mA HFE/400
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:625mW; DC Collector Current:800mA; DC Current Gain Max (hfe):250; No. of Pins:3 ;RoHS Compliant: Yes
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors - BJT PNP -45V -800mA HFE/400
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:625mW; DC Collector Current:800mA; DC Current Gain Max (hfe):250; No. of Pins:3 ;RoHS Compliant: Yes
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