Infineon Technologies BC 807-25 E6327
- Part Number:
- BC 807-25 E6327
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2470103-BC 807-25 E6327
- Description:
- TRANS PNP 45V 0.5A SOT-23
- Datasheet:
- BC807, BC808
Infineon Technologies BC 807-25 E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BC 807-25 E6327.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC807
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max330mW
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency200MHz
- Frequency - Transition200MHz
- Power Dissipation-Max (Abs)0.33W
- RoHS StatusRoHS Compliant
BC 807-25 E6327 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.200MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.
BC 807-25 E6327 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz
BC 807-25 E6327 Applications
There are a lot of Infineon Technologies
BC 807-25 E6327 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.200MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.
BC 807-25 E6327 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz
BC 807-25 E6327 Applications
There are a lot of Infineon Technologies
BC 807-25 E6327 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
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