Alliance Memory, Inc. AS6C4008-55BIN
- Part Number:
- AS6C4008-55BIN
- Manufacturer:
- Alliance Memory, Inc.
- Ventron No:
- 3720970-AS6C4008-55BIN
- Description:
- IC SRAM 4MBIT 55NS 36TFBGA
- Datasheet:
- AS6C4008-55BIN
Alliance Memory, Inc. AS6C4008-55BIN technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS6C4008-55BIN.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case36-TFBGA
- Surface MountYES
- Number of Pins36
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2009
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations36
- TechnologySRAM - Asynchronous
- Voltage - Supply2.7V~5.5V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count36
- Operating Supply Voltage3V
- Supply Voltage-Max (Vsup)5.5V
- Power Supplies3/5V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size4Mb 512K x 8
- Number of Ports1
- Memory TypeVolatile
- Supply Current-Max0.06mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page55ns
- Address Bus Width19b
- Density4 Mb
- Standby Current-Max0.00003A
- Access Time (Max)55 ns
- I/O TypeCOMMON
- Standby Voltage-Min2V
- Length8mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
AS6C4008-55BIN Overview
In 2009, a new device was published with impressive specifications. The Pin Count for this device is 36, providing a compact design for easy integration into various systems. The Supply Voltage-Max (Vsup) is 5.5V, ensuring stable and reliable operation. With dual Power Supplies of 3/5V, this device offers flexibility in power requirements. The Memory Size is 4Mb 512K x 8, providing ample storage for data. The Memory Format is SRAM, which offers fast access times and low power consumption. The Memory Width is 8, making it compatible with various systems. The Address Bus Width is 19b, allowing for a large address space. Additionally, the Standby Current-Max is an impressive 0.00003A, ensuring minimal power consumption when not in use. This device is also ROHS3 Compliant, making it environmentally friendly.
AS6C4008-55BIN Features
Package / Case: 36-TFBGA
36 Pins
Operating Supply Voltage:3V
I/O Type: COMMON
AS6C4008-55BIN Applications
There are a lot of Alliance Memory, Inc.
AS6C4008-55BIN Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
In 2009, a new device was published with impressive specifications. The Pin Count for this device is 36, providing a compact design for easy integration into various systems. The Supply Voltage-Max (Vsup) is 5.5V, ensuring stable and reliable operation. With dual Power Supplies of 3/5V, this device offers flexibility in power requirements. The Memory Size is 4Mb 512K x 8, providing ample storage for data. The Memory Format is SRAM, which offers fast access times and low power consumption. The Memory Width is 8, making it compatible with various systems. The Address Bus Width is 19b, allowing for a large address space. Additionally, the Standby Current-Max is an impressive 0.00003A, ensuring minimal power consumption when not in use. This device is also ROHS3 Compliant, making it environmentally friendly.
AS6C4008-55BIN Features
Package / Case: 36-TFBGA
36 Pins
Operating Supply Voltage:3V
I/O Type: COMMON
AS6C4008-55BIN Applications
There are a lot of Alliance Memory, Inc.
AS6C4008-55BIN Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
AS6C4008-55BIN More Descriptions
AS6C4008 Series 4 Mb (512 K x 8) 2.7 to 5.5 V 55 ns SMT Static RAM - TFBGA-36
4Mb LP SRAM 512K x 8 2.7 ~ 5.5V 36ball TFBGA (6 x 8mm) 55ns Industrial Temp
SRAM, 4MB, 512KX8, 3-5V, 48BGA; Memory Size: 4Mbit; SRAM Memory Configuration: 512K x 8bit; Supply Voltage Range: 2.7V to 5.5V; Memory Case Style: TFBGA; No. of Pins: 36Pins; Access Time: 55ns; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: To Be Advised; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2018); Operating Temperature Range: -40°C to 85°C; Supply Voltage Max: 5.5V; Supply Voltage Min: 2.7V
4Mb LP SRAM 512K x 8 2.7 ~ 5.5V 36ball TFBGA (6 x 8mm) 55ns Industrial Temp
SRAM, 4MB, 512KX8, 3-5V, 48BGA; Memory Size: 4Mbit; SRAM Memory Configuration: 512K x 8bit; Supply Voltage Range: 2.7V to 5.5V; Memory Case Style: TFBGA; No. of Pins: 36Pins; Access Time: 55ns; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: To Be Advised; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2018); Operating Temperature Range: -40°C to 85°C; Supply Voltage Max: 5.5V; Supply Voltage Min: 2.7V
The three parts on the right have similar specifications to AS6C4008-55BIN.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxAccess Time (Max)I/O TypeStandby Voltage-MinLengthRadiation HardeningREACH SVHCRoHS StatusHTS CodeJESD-30 CodeOrganizationMemory DensityAlternate Memory WidthHeight Seated (Max)WidthOperating ModeReach Compliance CodeView Compare
-
AS6C4008-55BIN8 WeeksSurface Mount36-TFBGAYES36-40°C~85°C TATray2009yesActive3 (168 Hours)36SRAM - Asynchronous2.7V~5.5VBOTTOM26013V0.75mm40363V5.5V3/5V2.7V4Mb 512K x 81Volatile0.06mASRAMParallel3-STATE855ns19b4 Mb0.00003A55 nsCOMMON2V8mmNoNo SVHCROHS3 Compliant----------
-
8 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES--40°C~85°C TATape & Reel (TR)--Active3 (168 Hours)48SRAM - Asynchronous2.7V~3.6VDUALNOT SPECIFIED13V0.5mmNOT SPECIFIED--3.6V-2.7V64Mb 4M x 16-Volatile-SRAMParallel-1655ns---55 ns--18.4mm--Non-RoHS Compliant8542.32.00.41R-PDSO-G484MX1667108864 bit81.2mm12mm--
-
8 WeeksSurface Mount48-LFBGAYES--40°C~85°C TATray--Active3 (168 Hours)48CMOS2.7V~3.6VBOTTOMNOT SPECIFIED13V0.75mmNOT SPECIFIED--3.6V-2.7V32Mb 2M x 16-Volatile-SRAMParallel-1655ns---55 ns--10mm--ROHS3 Compliant-R-PBGA-B482MX1633554432 bit-1.4mm8mmASYNCHRONOUS-
-
8 WeeksSurface Mount28-TSSOP (0.465, 11.80mm Width)-28-40°C~85°C TATape & Reel (TR)2005yesActive3 (168 Hours)-SRAM - Asynchronous2.7V~5.5V-NOT SPECIFIED---NOT SPECIFIED-----256Kb 32K x 8-Volatile-SRAMParallel--55ns---------ROHS3 Compliant--------unknown
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