Alliance Memory, Inc. AS6C2016-55BINTR

Name: AS6C2016-55BINTR
Brand: Alliance Memory, Inc.
SKU: 3719667-AS6C2016-55BINTR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AS6C2016-55BINTR

Manufacturer:: Alliance Memory, Inc.

Ventron No:: 3719667-AS6C2016-55BINTR

Description:: IC SRAM 2MBIT 55NS 48TFBGA

ECAD Model:

Datasheet:: AS6C2016-55BINTR

Specifications

Alliance Memory, Inc. AS6C2016-55BINTR technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS6C2016-55BINTR.

Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
48-TFBGA
Number of Pins
48
Operating Temperature
-40°C~85°C TA
Packaging
Tape & Reel (TR)
Published
2008
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
SRAM - Asynchronous
Voltage - Supply
2.7V~5.5V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Reflow Temperature-Max (s)
NOT SPECIFIED
Memory Size
2Mb 128K x 16
Memory Type
Volatile
Memory Format
SRAM
Memory Interface
Parallel
Write Cycle Time - Word, Page
55ns
RoHS Status
ROHS3 Compliant

Description

AS6C2016-55BINTR Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tape & Reel (TR) size. Embedded in the 48-TFBGA case, memory ics is a single file. The chip has an 2Mb 128K x 16 memory. The device uses a mainstream SRAM-format memory. With an extended designed operating temperature of -40°C~85°C TA, this device is capable of lots of demanding applications. There is a voltage range of 2.7V~5.5V for the supply voltage. As far as the mounting type is concerned, Surface Mount is recommended. A 48-pin package containing this memory device is used to house this device.

AS6C2016-55BINTR Features
Package / Case: 48-TFBGA
48 Pins

AS6C2016-55BINTR Applications
There are a lot of Alliance Memory, Inc. AS6C2016-55BINTR Memory applications.

data buffer
printers
personal digital assistants
embedded logic
eSRAM
workstations,
DVD disk buffer
servers
supercomputers
hard disk drive (HDD)

AS6C2016-55BINTR More Descriptions

SRAM Chip Async Single 3V 2M-Bit 128K x 16 55ns 48-Pin TFBGA
Low Power CMOS SRAM 2MB 48ball TFBGA 2.7-5V 128k x 16
IC SRAM 2MBIT PARALLEL 48TFBGA
SRAM 2M, 3.3V, 55ns 128K x 16 Asyn SRAM

Product Comparison

The three parts on the right have similar specifications to AS6C2016-55BINTR.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Peak Reflow Temperature (Cel)

Reach Compliance Code

Reflow Temperature-Max (s)

Memory Size

Memory Type

Memory Format

Memory Interface

Write Cycle Time - Word, Page

RoHS Status

Surface Mount

Number of Terminations

Terminal Position

Number of Functions

Supply Voltage

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Operating Mode

Organization

Memory Width

Memory Density

Access Time (Max)

Length

Height Seated (Max)

Width

JESD-609 Code

Terminal Finish

Pin Count

View Compare
AS6C2016-55BINTR

Alliance Memory, Inc.

8 Weeks

Surface Mount

48-TFBGA

48

-40°C~85°C TA

Tape & Reel (TR)

2008

yes

Active

3 (168 Hours)

SRAM - Asynchronous

2.7V~5.5V

NOT SPECIFIED

unknown

NOT SPECIFIED

2Mb 128K x 16

Volatile

SRAM

Parallel

55ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
AS6C3216A-55BINTR

Alliance Memory, Inc.

8 Weeks

Surface Mount

48-LFBGA

-

-40°C~85°C TA

Tape & Reel (TR)

-

-

Active

3 (168 Hours)

CMOS

2.7V~3.6V

NOT SPECIFIED

-

-

32Mb 2M x 16

Volatile

SRAM

Parallel

55ns

ROHS3 Compliant

YES

48

BOTTOM

1

3V

0.75mm

NOT SPECIFIED

R-PBGA-B48

3.6V

2.7V

ASYNCHRONOUS

2MX16

16

33554432 bit

55 ns

10mm

1.4mm

8mm

-

-

-

AS6C2016-55BINTR vs AS6C3216A-55BINTR
AS6C6416-55BINTR

Alliance Memory, Inc.

8 Weeks

Surface Mount

48-LFBGA

-

-40°C~85°C TA

Tape & Reel (TR)

-

-

Active

3 (168 Hours)

SRAM - Asynchronous

2.7V~3.6V

NOT SPECIFIED

-

-

64Mb 4M x 16

Volatile

SRAM

Parallel

55ns

ROHS3 Compliant

-

-

-

-

-

-

NOT SPECIFIED

-

-

-

-

-

-

-

-

-

-

-

-

-

-

AS6C2016-55BINTR vs AS6C6416-55BINTR
AS6C1616-55TINL

Alliance Memory, Inc.

8 Weeks

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

-

-40°C~85°C TA

Tray

-

yes

Active

3 (168 Hours)

CMOS

2.7V~3.6V

260

-

-

16Mb 1M x 16

Volatile

SRAM

Parallel

55ns

ROHS3 Compliant

YES

48

DUAL

1

3V

0.5mm

40

R-PDSO-G48

3.6V

2.7V

ASYNCHRONOUS

1MX16

16

16777216 bit

55 ns

18.4mm

1.2mm

12mm

e3/e6

PURE MATTE TIN/TIN BISMUTH

48

AS6C2016-55BINTR vs AS6C1616-55TINL