Alliance Memory, Inc. AS6C2008A-55BINTR

Name: AS6C2008A-55BINTR
Brand: Alliance Memory, Inc.
SKU: 3719697-AS6C2008A-55BINTR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AS6C2008A-55BINTR

Manufacturer:: Alliance Memory, Inc.

Ventron No:: 3719697-AS6C2008A-55BINTR

Description:: IC SRAM 2MBIT 55NS 36TFBGA

ECAD Model:

Datasheet:: AS6C2008A-55BINTR

Specifications

Alliance Memory, Inc. AS6C2008A-55BINTR technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS6C2008A-55BINTR.

Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
36-TFBGA
Operating Temperature
-40°C~85°C TA
Packaging
Tape & Reel (TR)
Published
2007
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
SRAM - Asynchronous
Voltage - Supply
2.7V~5.5V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Memory Size
2Mb 256K x 8
Memory Type
Volatile
Memory Format
SRAM
Memory Interface
Parallel
Write Cycle Time - Word, Page
55ns
RoHS Status
ROHS3 Compliant

Description

AS6C2008A-55BINTR Overview
The package or case for this particular product is 36-TFBGA, making it compact and suitable for various electronic devices. Its operating temperature range is -40°C to 85°C TA, ensuring its durability and functionality in extreme conditions. The packaging method used for this product is Tape & Reel (TR), which allows for easy handling and transportation. This product was published in 2007, indicating its reliability and longevity in the market. Its part status is active, meaning it is currently available for purchase. The technology used in this product is SRAM - Asynchronous, providing fast and efficient data storage and retrieval. The voltage supply for this product ranges from 2.7V to 5.5V, making it compatible with different power sources. The peak reflow temperature for this product is not specified. This product falls under the category of volatile memory, meaning it requires a constant power supply to retain data. Its memory interface is parallel, allowing for simultaneous data transfer between the memory and other components.

AS6C2008A-55BINTR Features
Package / Case: 36-TFBGA

AS6C2008A-55BINTR Applications
There are a lot of Alliance Memory, Inc.
AS6C2008A-55BINTR Memory applications.

mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer

AS6C2008A-55BINTR More Descriptions

Low Power CMOS SRAM 2MB 36 ball TFBGA (6mm x 8mm) 2.7-5V 256k x 8
SRAM Chip Async Single 3V 2M-Bit 256K x 8 55ns 36-Pin TF-BGA T/R
IC SRAM 2MBIT PARALLEL 36TFBGA

Product Comparison

The three parts on the right have similar specifications to AS6C2008A-55BINTR.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Memory Size

Memory Type

Memory Format

Memory Interface

Write Cycle Time - Word, Page

RoHS Status

Surface Mount

Number of Terminations

Terminal Position

Number of Functions

Supply Voltage

Terminal Pitch

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Operating Mode

Organization

Memory Width

Memory Density

Access Time (Max)

Length

Height Seated (Max)

Width

HTS Code

Alternate Memory Width

JESD-609 Code

Terminal Finish

Pin Count

View Compare
AS6C2008A-55BINTR

Alliance Memory, Inc.

8 Weeks

Surface Mount

36-TFBGA

-40°C~85°C TA

Tape & Reel (TR)

2007

yes

Active

3 (168 Hours)

SRAM - Asynchronous

2.7V~5.5V

NOT SPECIFIED

unknown

NOT SPECIFIED

2Mb 256K x 8

Volatile

SRAM

Parallel

55ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
AS6C3216A-55BIN

Alliance Memory, Inc.

8 Weeks

Surface Mount

48-LFBGA

-40°C~85°C TA

Tray

-

-

Active

3 (168 Hours)

CMOS

2.7V~3.6V

NOT SPECIFIED

-

NOT SPECIFIED

32Mb 2M x 16

Volatile

SRAM

Parallel

55ns

ROHS3 Compliant

YES

48

BOTTOM

1

3V

0.75mm

R-PBGA-B48

3.6V

2.7V

ASYNCHRONOUS

2MX16

16

33554432 bit

55 ns

10mm

1.4mm

8mm

-

-

-

-

-

AS6C2008A-55BINTR vs AS6C3216A-55BIN
AS6C3216A-55TINTR

Alliance Memory, Inc.

8 Weeks

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

-40°C~85°C TA

Tape & Reel (TR)

-

yes

Active

3 (168 Hours)

SRAM - Asynchronous

2.7V~3.6V

NOT SPECIFIED

-

NOT SPECIFIED

32Mb 2M x 16

Volatile

SRAM

Parallel

55ns

ROHS3 Compliant

YES

48

DUAL

1

3V

0.5mm

R-PDSO-G48

3.6V

2.7V

-

2MX16

16

33554432 bit

55 ns

18.4mm

1.2mm

12mm

8542.32.00.41

8

-

-

-

AS6C2008A-55BINTR vs AS6C3216A-55TINTR
AS6C1616-55TINL

Alliance Memory, Inc.

8 Weeks

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

-40°C~85°C TA

Tray

-

yes

Active

3 (168 Hours)

CMOS

2.7V~3.6V

260

-

40

16Mb 1M x 16

Volatile

SRAM

Parallel

55ns

ROHS3 Compliant

YES

48

DUAL

1

3V

0.5mm

R-PDSO-G48

3.6V

2.7V

ASYNCHRONOUS

1MX16

16

16777216 bit

55 ns

18.4mm

1.2mm

12mm

-

-

e3/e6

PURE MATTE TIN/TIN BISMUTH

48

AS6C2008A-55BINTR vs AS6C1616-55TINL