AS4C64M16MD1-6BCN

Alliance Memory, Inc. AS4C64M16MD1-6BCN

Part Number:
AS4C64M16MD1-6BCN
Manufacturer:
Alliance Memory, Inc.
Ventron No:
3718378-AS4C64M16MD1-6BCN
Description:
IC SDRAM 1GBIT 166MHZ 60FBGA
ECAD Model:
Datasheet:
AS4C64M16MD1-6BCN

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Specifications
Alliance Memory, Inc. AS4C64M16MD1-6BCN technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS4C64M16MD1-6BCN.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    60-TFBGA
  • Surface Mount
    YES
  • Number of Pins
    60
  • Operating Temperature
    -25°C~85°C TA
  • Packaging
    Tray
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    60
  • ECCN Code
    EAR99
  • Additional Feature
    AUTO/SELF REFRESH
  • HTS Code
    8542.32.00.32
  • Technology
    SDRAM - Mobile LPDDR
  • Voltage - Supply
    1.7V~1.95V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.8mm
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Supply Voltage
    1.8V
  • Supply Voltage-Max (Vsup)
    1.95V
  • Supply Voltage-Min (Vsup)
    1.7V
  • Memory Size
    1Gb 64M x 16
  • Number of Ports
    1
  • Memory Type
    Volatile
  • Operating Mode
    SYNCHRONOUS
  • Clock Frequency
    166MHz
  • Access Time
    5ns
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • Organization
    64MX16
  • Memory Width
    16
  • Write Cycle Time - Word, Page
    15ns
  • Address Bus Width
    14b
  • Density
    1 Gb
  • Height Seated (Max)
    1.05mm
  • Length
    10mm
  • RoHS Status
    RoHS Compliant
Description
AS4C64M16MD1-6BCN Overview
This product features a surface mount design and utilizes SDRAM technology specifically designed for mobile devices. The terminal position is located at the bottom of the product. It has one function and operates at a supply voltage of 1.8V, with a minimum supply voltage of 1.7V. The memory size is 1Gb with a 64M x 16 organization. It operates in synchronous mode with a write cycle time of 15ns for both words and pages.

AS4C64M16MD1-6BCN Features
Package / Case: 60-TFBGA
60 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH


AS4C64M16MD1-6BCN Applications
There are a lot of Alliance Memory, Inc.
AS4C64M16MD1-6BCN Memory applications.


Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
AS4C64M16MD1-6BCN More Descriptions
DDR 1GB 166MHz 333Mbps/pin 1.8V 64M x 16 60-ball FPBGA
DRAM Chip DDR SDRAM 1G-Bit 64M x 16 1.8V 60-Pin FBGA
LPDDR1 1G 64M x 16 1.8V 166 MHz 60ball FBGA Commercial Temp
Product Comparison
The three parts on the right have similar specifications to AS4C64M16MD1-6BCN.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Memory Type
    Operating Mode
    Clock Frequency
    Access Time
    Memory Format
    Memory Interface
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Address Bus Width
    Density
    Height Seated (Max)
    Length
    RoHS Status
    Pbfree Code
    JESD-30 Code
    Memory Density
    Width
    Series
    View Compare
  • AS4C64M16MD1-6BCN
    AS4C64M16MD1-6BCN
    8 Weeks
    Surface Mount
    60-TFBGA
    YES
    60
    -25°C~85°C TA
    Tray
    2011
    Obsolete
    3 (168 Hours)
    60
    EAR99
    AUTO/SELF REFRESH
    8542.32.00.32
    SDRAM - Mobile LPDDR
    1.7V~1.95V
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.8mm
    NOT SPECIFIED
    1.8V
    1.95V
    1.7V
    1Gb 64M x 16
    1
    Volatile
    SYNCHRONOUS
    166MHz
    5ns
    DRAM
    Parallel
    64MX16
    16
    15ns
    14b
    1 Gb
    1.05mm
    10mm
    RoHS Compliant
    -
    -
    -
    -
    -
    -
  • AS4C256M16D3LB-12BINTR
    8 Weeks
    Surface Mount
    96-TFBGA
    -
    -
    -40°C~95°C TC
    Tape & Reel (TR)
    -
    Active
    3 (168 Hours)
    -
    -
    -
    -
    SDRAM - DDR3L
    1.283V~1.45V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4Gb 256M x 16
    -
    Volatile
    -
    800MHz
    20ns
    DRAM
    Parallel
    -
    -
    15ns
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
  • AS4C256M8D2-25BIN
    8 Weeks
    Surface Mount
    60-TFBGA
    YES
    -
    -40°C~95°C TC
    Tray
    2014
    Active
    3 (168 Hours)
    60
    -
    AUTO/SELF REFRESH
    -
    SDRAM - DDR2
    1.7V~1.9V
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.8mm
    NOT SPECIFIED
    -
    1.9V
    1.7V
    2Gb 256M x 8
    1
    Volatile
    SYNCHRONOUS
    400MHz
    57.5ns
    DRAM
    Parallel
    256MX8
    8
    15ns
    -
    -
    1.2mm
    13mm
    ROHS3 Compliant
    yes
    R-PBGA-B60
    2147483648 bit
    10.5mm
    -
  • AS4C256M16D3B-12BANTR
    8 Weeks
    Surface Mount
    96-TFBGA
    -
    -
    -40°C~105°C TC
    Tape & Reel (TR)
    -
    Active
    3 (168 Hours)
    -
    -
    -
    -
    SDRAM - DDR3
    1.425V~1.575V
    -
    NOT SPECIFIED
    -
    -
    -
    NOT SPECIFIED
    -
    -
    -
    4Gb 256M x 16
    -
    Volatile
    -
    800MHz
    20ns
    DRAM
    Parallel
    -
    -
    15ns
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    Automotive, AEC-Q100
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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