Alliance Memory, Inc. AS4C1M16S-6TCN
- Part Number:
- AS4C1M16S-6TCN
- Manufacturer:
- Alliance Memory, Inc.
- Ventron No:
- 3231590-AS4C1M16S-6TCN
- Description:
- IC SDRAM 16MBIT 166MHZ 50TSOP
- Datasheet:
- AS4C1M16S-6TCN
Alliance Memory, Inc. AS4C1M16S-6TCN technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS4C1M16S-6TCN.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case50-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations50
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G50
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)3V
- Memory Size16Mb 1M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency166MHz
- Access Time5.4ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization1MX16
- Memory Width16
- Write Cycle Time - Word, Page2ns
- Memory Density16777216 bit
- Height Seated (Max)1.2mm
- Length20.95mm
- Width10.16mm
- RoHS StatusNon-RoHS Compliant
AS4C1M16S-6TCN Overview
This product is currently active and readily available for purchase. It features 50 termination points, making it suitable for a variety of applications. The technology used is SDRAM, providing high-speed data transfer capabilities. The voltage supply range is 3V to 3.6V, ensuring compatibility with a wide range of systems. The peak reflow temperature is not specified, allowing for flexibility in manufacturing processes. The minimum supply voltage is 3V, providing reliable and stable operation. With a memory size of 16Mb and a density of 16777216 bits, this product offers ample storage capacity. Its memory format is DRAM, and it has a width of 10.16mm.
AS4C1M16S-6TCN Features
Package / Case: 50-TSOP (0.400, 10.16mm Width)
Additional Feature:AUTO/SELF REFRESH
AS4C1M16S-6TCN Applications
There are a lot of Alliance Memory, Inc.
AS4C1M16S-6TCN Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
This product is currently active and readily available for purchase. It features 50 termination points, making it suitable for a variety of applications. The technology used is SDRAM, providing high-speed data transfer capabilities. The voltage supply range is 3V to 3.6V, ensuring compatibility with a wide range of systems. The peak reflow temperature is not specified, allowing for flexibility in manufacturing processes. The minimum supply voltage is 3V, providing reliable and stable operation. With a memory size of 16Mb and a density of 16777216 bits, this product offers ample storage capacity. Its memory format is DRAM, and it has a width of 10.16mm.
AS4C1M16S-6TCN Features
Package / Case: 50-TSOP (0.400, 10.16mm Width)
Additional Feature:AUTO/SELF REFRESH
AS4C1M16S-6TCN Applications
There are a lot of Alliance Memory, Inc.
AS4C1M16S-6TCN Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
AS4C1M16S-6TCN More Descriptions
R-PDSO-G50 Surface Mount Tray 1MX16 ic memory 166MHz 5.4ns 10.16mm 16777216bit
16Mb SDR 1M x 16 3.3V 50pin TSOP II 166 Mhz Commercial Temp
SDRAM 16MB 166MHz 3V ~ 3.6V 512K x 16 50-pin TSOP II
DRAM 16Mb, 3.3V, 166Mhz 1M x 16 SDRAM
16Mb SDR 1M x 16 3.3V 50pin TSOP II 166 Mhz Commercial Temp
SDRAM 16MB 166MHz 3V ~ 3.6V 512K x 16 50-pin TSOP II
DRAM 16Mb, 3.3V, 166Mhz 1M x 16 SDRAM
The three parts on the right have similar specifications to AS4C1M16S-6TCN.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityHeight Seated (Max)LengthWidthRoHS StatusMountNumber of PinsJESD-609 CodePbfree CodeECCN CodeTerminal FinishHTS CodePin CountOperating Supply VoltageData RateData Bus WidthAddress Bus WidthDensityHeightRadiation HardeningLead FreeView Compare
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AS4C1M16S-6TCN8 WeeksSurface Mount50-TSOP (0.400, 10.16mm Width)YES0°C~70°C TATray2015Active3 (168 Hours)50AUTO/SELF REFRESHSDRAM3V~3.6VDUALNOT SPECIFIED13.3V0.8mmNOT SPECIFIEDR-PDSO-G503.6V3V16Mb 1M x 161VolatileSYNCHRONOUS166MHz5.4nsDRAMParallel1MX16162ns16777216 bit1.2mm20.95mm10.16mmNon-RoHS Compliant-----------------
-
8 WeeksSurface Mount84-TFBGA-0°C~85°C TCTape & Reel (TR)2015Active3 (168 Hours)--SDRAM - DDR21.7V~1.9V-NOT SPECIFIED---NOT SPECIFIED---2Gb 128M x 16-Volatile-400MHz-DRAMParallel--15ns----RoHS Compliant----------------
-
-Surface Mount66-TSSOP (0.400, 10.16mm Width)--40°C~85°C TATray2012Obsolete3 (168 Hours)66AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VDUAL26012.5V0.65mm40-2.7V2.3V512Mb 32M x 161Volatile-200MHz700psDRAMParallel32MX16-15ns--22.35mm10.29mmRoHS CompliantSurface Mount66e3/e6yesEAR99PURE MATTE TIN/TIN BISMUTH8542.32.00.28662.5V400 Mbps16b13b512 Mb1.1mmNoLead Free
-
8 WeeksSurface Mount60-VFBGA--30°C~85°C TJTape & Reel (TR)2015Active3 (168 Hours)--SDRAM - Mobile LPDDR1.7V~1.9V-NOT SPECIFIED---NOT SPECIFIED---512Mb 32M x 16-Volatile-200MHz700psDRAMParallel--15ns----ROHS3 Compliant----------------
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