Microsemi Corporation APTGT50H60T2G

Name: APTGT50H60T2G
Brand: Microsemi Corporation
SKU: 2854365-APTGT50H60T2G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT50H60T2G

Manufacturer:: Microsemi Corporation

Ventron No:: 2854365-APTGT50H60T2G

Description:: MOD IGBT 600V 80A SP2

ECAD Model:

Datasheet:: APTGT50H60T2G

Specifications

Microsemi Corporation APTGT50H60T2G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT50H60T2G.

Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP2
Number of Pins
22
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
176W
Configuration
Full Bridge Inverter
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Current - Collector Cutoff (Max)
250μA
Collector Emitter Breakdown Voltage
600V
Input Capacitance
3.15nF
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 50A
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
3.15nF @ 25V
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

APTGT50H60T2G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT50H60T2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT50H60T2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT50H60T2G More Descriptions

Trans IGBT Module N-CH 600V 80A 22-Pin Case SP-2
IGBT MODULE 600V 80A 176W SP2

Product Comparison

The three parts on the right have similar specifications to APTGT50H60T2G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Configuration

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Input Capacitance

Vce(on) (Max) @ Vge, Ic

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

Radiation Hardening

RoHS Status

Published

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Pin Count

Number of Elements

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Voltage - Collector Emitter Breakdown (Max)

Turn On Time

Turn Off Time-Nom (toff)

Gate-Emitter Voltage-Max

VCEsat-Max

Element Configuration

Lead Free

View Compare
APTGT50H60T2G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP2

22

Obsolete

1 (Unlimited)

EAR99

175°C

-40°C

176W

Full Bridge Inverter

Standard

600V

80A

250μA

600V

3.15nF

1.9V @ 15V, 50A

Trench Field Stop

Yes

3.15nF @ 25V

No

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
APTGF300SK120G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP6

5

Obsolete

1 (Unlimited)

EAR99

150°C

-40°C

1.78kW

Single

Standard

1.2kV

400A

500μA

1.2kV

21nF

3.9V @ 15V, 300A

NPT

No

21nF @ 25V

-

RoHS Compliant

2012

e1

yes

5

TIN SILVER COPPER

Insulated Gate BIP Transistors

UPPER

UNSPECIFIED

5

1

ISOLATED

1780W

MOTOR CONTROL

N-CHANNEL

1200V

190 ns

400 ns

20V

3.9 V

-

-

APTGT50H60T2G vs APTGF300SK120G
APTGF350DU60G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP6

7

Obsolete

1 (Unlimited)

EAR99

150°C

-40°C

1.562kW

Dual, Common Source

Standard

600V

430A

200μA

600V

17.2nF

2.5V @ 15V, 360A

NPT

No

17.2nF @ 25V

-

RoHS Compliant

2012

e1

yes

7

TIN SILVER COPPER

Insulated Gate BIP Transistors

UPPER

UNSPECIFIED

7

2

ISOLATED

1562W

POWER CONTROL

N-CHANNEL

-

51 ns

210 ns

20V

2.5 V

Dual

-

APTGT50H60T2G vs APTGF350DU60G
APTGF25H120T1G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP1

12

Obsolete

1 (Unlimited)

EAR99

150°C

-40°C

208W

Full Bridge Inverter

Standard

1.2kV

40A

250μA

1.2kV

1.65nF

3.7V @ 15V, 25A

NPT

Yes

1.65nF @ 25V

No

RoHS Compliant

2007

e1

yes

12

TIN SILVER COPPER

Insulated Gate BIP Transistors

UPPER

UNSPECIFIED

12

4

ISOLATED

-

MOTOR CONTROL

N-CHANNEL

1200V

110 ns

386 ns

20V

3.7 V

-

Lead Free

APTGT50H60T2G vs APTGF25H120T1G