Microsemi Corporation APTGT225SK170G

Name: APTGT225SK170G
Brand: Microsemi Corporation
SKU: 3071996-APTGT225SK170G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT225SK170G

Manufacturer:: Microsemi Corporation

Ventron No:: 3071996-APTGT225SK170G

Description:: IGBT 1700V 340A 1250W SP6

ECAD Model:

Datasheet:: APTGT225SK170G

Specifications

Microsemi Corporation APTGT225SK170G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT225SK170G.

Factory Lead Time
36 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP6
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Additional Feature
AVALANCHE RATED
Max Power Dissipation
1.25kW
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
5
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
1250W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.7kV
Max Collector Current
340A
Current - Collector Cutoff (Max)
500μA
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Input Capacitance
20nF
Turn On Time
450 ns
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 225A
Turn Off Time-Nom (toff)
1100 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
20nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT225SK170G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT225SK170G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT225SK170G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT225SK170G More Descriptions

Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT225SK170G
Insulated Gate Bipolar Transistor, 340A I(C), 1700V V(BR)CES, N-Channel
Trans IGBT Module N-CH 1.7KV 340A 5-Pin Case SP6
High Voltage Power Module, Buck chopper, 1700V, RoHSMicrochip SCT
IGBT MODULE 1700V 340A 1250W SP6

Product Comparison

The three parts on the right have similar specifications to APTGT225SK170G.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

RoHS Status

Max Operating Temperature

Min Operating Temperature

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Element Configuration

Gate-Emitter Voltage-Max

VCEsat-Max

View Compare
APTGT225SK170G

Microsemi Corporation

36 Weeks

Chassis Mount, Screw

Chassis Mount

SP6

5

SILICON

-40°C~150°C TJ

2006

e1

yes

Active

1 (Unlimited)

5

EAR99

TIN SILVER COPPER

AVALANCHE RATED

1.25kW

UPPER

UNSPECIFIED

5

1

Single

ISOLATED

1250W

POWER CONTROL

N-CHANNEL

Standard

1.7kV

340A

500μA

1.7kV

1700V

20nF

450 ns

2.4V @ 15V, 225A

1100 ns

Trench Field Stop

No

20nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-
APTGF150A120T3WG

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP3

18

-

-

2009

-

-

Obsolete

1 (Unlimited)

9

EAR99

-

-

961W

UPPER

UNSPECIFIED

25

2

Half Bridge

ISOLATED

-

POWER CONTROL

N-CHANNEL

Standard

1.2kV

210A

250μA

1.2kV

1200V

9.3nF

190 ns

3.7V @ 15V, 150A

390 ns

NPT

Yes

9.3nF @ 25V

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

NOT SPECIFIED

NOT SPECIFIED

R-XUFM-X9

Not Qualified

Dual

20V

3.7 V

APTGT225SK170G vs APTGF150A120T3WG
APTGF350DU60G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP6

7

-

-

2012

e1

yes

Obsolete

1 (Unlimited)

7

EAR99

TIN SILVER COPPER

-

1.562kW

UPPER

UNSPECIFIED

7

2

Dual, Common Source

ISOLATED

1562W

POWER CONTROL

N-CHANNEL

Standard

600V

430A

200μA

600V

-

17.2nF

51 ns

2.5V @ 15V, 360A

210 ns

NPT

No

17.2nF @ 25V

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

-

-

-

-

Dual

20V

2.5 V

APTGT225SK170G vs APTGF350DU60G
APTGF30TL601G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP1

12

-

-

2012

-

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

140W

-

-

-

1

Three Level Inverter

-

-

-

-

Standard

600V

42A

250μA

600V

-

1.35nF

-

2.45V @ 15V, 30A

-

NPT

No

1.35nF @ 25V

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

-

-

-

-

-

20V

2.45 V

APTGT225SK170G vs APTGF30TL601G