Microsemi Corporation APTGT200DA60TG

Name: APTGT200DA60TG
Brand: Microsemi Corporation
SKU: 2854389-APTGT200DA60TG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT200DA60TG

Manufacturer:: Microsemi Corporation

Ventron No:: 2854389-APTGT200DA60TG

Description:: IGBT 600V 290A 625W SP4

ECAD Model:

Datasheet:: APTGT200DA60TG

Specifications

Microsemi Corporation APTGT200DA60TG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT200DA60TG.

Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
SP4
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
12
Terminal Finish
TIN SILVER COPPER
Additional Feature
AVALANCHE RATED
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
625W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
12
JESD-30 Code
R-XUFM-X12
Qualification Status
Not Qualified
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
625W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.9V
Max Collector Current
290A
Current - Collector Cutoff (Max)
250μA
Collector Emitter Breakdown Voltage
600V
Input Capacitance
12.3nF
Turn On Time
180 ns
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 200A
Turn Off Time-Nom (toff)
370 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
12.3nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT200DA60TG Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT200DA60TG or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT200DA60TG. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT200DA60TG More Descriptions

IGBT 600V 290A 625W SP4
POWER IGBT TRANSISTOR

Product Comparison

The three parts on the right have similar specifications to APTGT200DA60TG.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Gate-Emitter Voltage-Max

Input Capacitance (Cies) @ Vce

RoHS Status

Published

ECCN Code

Max Operating Temperature

Min Operating Temperature

Element Configuration

Voltage - Collector Emitter Breakdown (Max)

VCEsat-Max

Radiation Hardening

Lead Free

View Compare
APTGT200DA60TG

Microsemi Corporation

Chassis Mount

Chassis Mount

SP4

4

SILICON

-40°C~175°C TJ

e1

yes

Discontinued

1 (Unlimited)

12

TIN SILVER COPPER

AVALANCHE RATED

Insulated Gate BIP Transistors

625W

UPPER

UNSPECIFIED

NOT SPECIFIED

NOT SPECIFIED

12

R-XUFM-X12

Not Qualified

1

Single

ISOLATED

625W

POWER CONTROL

N-CHANNEL

Standard

1.9V

290A

250μA

600V

12.3nF

180 ns

1.9V @ 15V, 200A

370 ns

Trench Field Stop

Yes

20V

12.3nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-
APTGF150A120T3WG

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP3

18

-

-

-

-

Obsolete

1 (Unlimited)

9

-

-

Insulated Gate BIP Transistors

961W

UPPER

UNSPECIFIED

NOT SPECIFIED

NOT SPECIFIED

25

R-XUFM-X9

Not Qualified

2

Half Bridge

ISOLATED

-

POWER CONTROL

N-CHANNEL

Standard

1.2kV

210A

250μA

1.2kV

9.3nF

190 ns

3.7V @ 15V, 150A

390 ns

NPT

Yes

20V

9.3nF @ 25V

RoHS Compliant

2009

EAR99

150°C

-40°C

Dual

1200V

3.7 V

-

-

APTGT200DA60TG vs APTGF150A120T3WG
APTGF150A120T3AG

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP3

20

-

-

-

-

Obsolete

1 (Unlimited)

10

-

-

Insulated Gate BIP Transistors

1.041kW

UPPER

UNSPECIFIED

-

-

25

R-XUFM-X10

-

2

Half Bridge

ISOLATED

1041W

POWER CONTROL

N-CHANNEL

Standard

1.2kV

210A

250μA

1.2kV

9.3nF

190 ns

3.7V @ 15V, 150A

390 ns

NPT

Yes

-

9.3nF @ 25V

RoHS Compliant

-

EAR99

150°C

-40°C

Dual

1200V

3.7 V

No

Lead Free

APTGT200DA60TG vs APTGF150A120T3AG
APTGF30TL601G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP1

12

-

-

-

-

Obsolete

1 (Unlimited)

-

-

-

Insulated Gate BIP Transistors

140W

-

-

-

-

-

-

-

1

Three Level Inverter

-

-

-

-

Standard

600V

42A

250μA

600V

1.35nF

-

2.45V @ 15V, 30A

-

NPT

No

20V

1.35nF @ 25V

RoHS Compliant

2012

EAR99

150°C

-40°C

-

-

2.45 V

-

-

APTGT200DA60TG vs APTGF30TL601G