Microsemi Corporation APTGT100DH170G

Name: APTGT100DH170G
Brand: Microsemi Corporation
SKU: 3071951-APTGT100DH170G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT100DH170G

Manufacturer:: Microsemi Corporation

Ventron No:: 3071951-APTGT100DH170G

Description:: IGBT MOD TRENCH ASYM BRIDGE SP6

ECAD Model:

Datasheet:: APTGT100DH170G

Specifications

Microsemi Corporation APTGT100DH170G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT100DH170G.

Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP6
Number of Pins
8
Supplier Device Package
SP6
Operating Temperature
-40°C~150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
560W
Configuration
Asymmetrical Bridge
Element Configuration
Dual
Power - Max
560W
Input
Standard
Collector Emitter Voltage (VCEO)
1.7kV
Max Collector Current
150A
Current - Collector Cutoff (Max)
350μA
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
150A
Input Capacitance
9nF
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 100A
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
9nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT100DH170G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT100DH170G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT100DH170G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT100DH170G More Descriptions

Trans IGBT Module N-CH 1.7KV 150A 8-Pin Case SP6
IGBT MOD TRENCH ASYM BRIDGE SP6
IGBT MODULE 1700V 150A 560W SP6

Product Comparison

The three parts on the right have similar specifications to APTGT100DH170G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Configuration

Element Configuration

Power - Max

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Input Capacitance

Vce(on) (Max) @ Vge, Ic

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

RoHS Status

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Pin Count

Number of Elements

Case Connection

Transistor Application

Polarity/Channel Type

Turn On Time

Turn Off Time-Nom (toff)

Gate-Emitter Voltage-Max

VCEsat-Max

Radiation Hardening

Lead Free

View Compare
APTGT100DH170G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP6

8

SP6

-40°C~150°C TJ

Obsolete

1 (Unlimited)

150°C

-40°C

560W

Asymmetrical Bridge

Dual

560W

Standard

1.7kV

150A

350μA

1.7kV

1700V

150A

9nF

2.4V @ 15V, 100A

Trench Field Stop

No

9nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
APTGF300SK120G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP6

5

-

-

Obsolete

1 (Unlimited)

150°C

-40°C

1.78kW

Single

-

1780W

Standard

1.2kV

400A

500μA

1.2kV

1200V

-

21nF

3.9V @ 15V, 300A

NPT

No

21nF @ 25V

RoHS Compliant

2012

e1

yes

5

EAR99

TIN SILVER COPPER

Insulated Gate BIP Transistors

UPPER

UNSPECIFIED

5

1

ISOLATED

MOTOR CONTROL

N-CHANNEL

190 ns

400 ns

20V

3.9 V

-

-

APTGT100DH170G vs APTGF300SK120G
APTGF25H120T1G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP1

12

-

-

Obsolete

1 (Unlimited)

150°C

-40°C

208W

Full Bridge Inverter

-

-

Standard

1.2kV

40A

250μA

1.2kV

1200V

-

1.65nF

3.7V @ 15V, 25A

NPT

Yes

1.65nF @ 25V

RoHS Compliant

2007

e1

yes

12

EAR99

TIN SILVER COPPER

Insulated Gate BIP Transistors

UPPER

UNSPECIFIED

12

4

ISOLATED

MOTOR CONTROL

N-CHANNEL

110 ns

386 ns

20V

3.7 V

No

Lead Free

APTGT100DH170G vs APTGF25H120T1G
APTGF100A1202G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP2

18

-

-

Obsolete

1 (Unlimited)

150°C

-40°C

568W

Half Bridge

Dual

-

Standard

1.2kV

135A

250μA

1.2kV

1200V

-

6.5nF

3.7V @ 15V, 100A

NPT

No

6.5nF @ 25V

RoHS Compliant

2012

-

-

-

EAR99

-

Insulated Gate BIP Transistors

-

-

-

1

-

-

-

-

-

20V

3.7 V

-

-

APTGT100DH170G vs APTGF100A1202G