Microsemi Corporation APTGF660U60D4G

Name: APTGF660U60D4G
Brand: Microsemi Corporation
SKU: 3587124-APTGF660U60D4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGF660U60D4G

Manufacturer:: Microsemi Corporation

Ventron No:: 3587124-APTGF660U60D4G

Description:: IGBT 600V 860A 2800W D4

ECAD Model:

Datasheet:: APTGF660U60D4G

Specifications

Microsemi Corporation APTGF660U60D4G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGF660U60D4G.

Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
D4
Number of Pins
4
Published
2012
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
2.8kW
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
4
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
2800W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
860A
Current - Collector Cutoff (Max)
500μA
Collector Emitter Breakdown Voltage
600V
Input Capacitance
36nF
Turn On Time
343 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 800A
Turn Off Time-Nom (toff)
545 ns
IGBT Type
NPT
NTC Thermistor
No
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
36nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGF660U60D4G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGF660U60D4G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGF660U60D4G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGF660U60D4G More Descriptions

Trans IGBT Module N-CH 600V 860A 4-Pin Case D4
POWER IGBT TRANSISTOR

Product Comparison

The three parts on the right have similar specifications to APTGF660U60D4G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Gate-Emitter Voltage-Max

Input Capacitance (Cies) @ Vce

RoHS Status

Element Configuration

VCEsat-Max

Voltage - Collector Emitter Breakdown (Max)

Radiation Hardening

Lead Free

View Compare
APTGF660U60D4G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

D4

4

2012

e1

yes

Obsolete

1 (Unlimited)

4

EAR99

TIN SILVER COPPER

150°C

-40°C

Insulated Gate BIP Transistors

2.8kW

UPPER

UNSPECIFIED

4

1

Single

ISOLATED

2800W

POWER CONTROL

N-CHANNEL

Standard

600V

860A

500μA

600V

36nF

343 ns

2.45V @ 15V, 800A

545 ns

NPT

No

20V

36nF @ 25V

RoHS Compliant

-

-

-

-

-

-
APTGF350DU60G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP6

7

2012

e1

yes

Obsolete

1 (Unlimited)

7

EAR99

TIN SILVER COPPER

150°C

-40°C

Insulated Gate BIP Transistors

1.562kW

UPPER

UNSPECIFIED

7

2

Dual, Common Source

ISOLATED

1562W

POWER CONTROL

N-CHANNEL

Standard

600V

430A

200μA

600V

17.2nF

51 ns

2.5V @ 15V, 360A

210 ns

NPT

No

20V

17.2nF @ 25V

RoHS Compliant

Dual

2.5 V

-

-

-

APTGF660U60D4G vs APTGF350DU60G
APTGF25H120T1G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP1

12

2007

e1

yes

Obsolete

1 (Unlimited)

12

EAR99

TIN SILVER COPPER

150°C

-40°C

Insulated Gate BIP Transistors

208W

UPPER

UNSPECIFIED

12

4

Full Bridge Inverter

ISOLATED

-

MOTOR CONTROL

N-CHANNEL

Standard

1.2kV

40A

250μA

1.2kV

1.65nF

110 ns

3.7V @ 15V, 25A

386 ns

NPT

Yes

20V

1.65nF @ 25V

RoHS Compliant

-

3.7 V

1200V

No

Lead Free

APTGF660U60D4G vs APTGF25H120T1G
APTGF100A1202G

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SP2

18

2012

-

-

Obsolete

1 (Unlimited)

-

EAR99

-

150°C

-40°C

Insulated Gate BIP Transistors

568W

-

-

-

1

Half Bridge

-

-

-

-

Standard

1.2kV

135A

250μA

1.2kV

6.5nF

-

3.7V @ 15V, 100A

-

NPT

No

20V

6.5nF @ 25V

RoHS Compliant

Dual

3.7 V

1200V

-

-

APTGF660U60D4G vs APTGF100A1202G