NXP USA Inc. AFT09MS015NT1

Name: AFT09MS015NT1
Brand: NXP USA Inc.
SKU: 2475060-AFT09MS015NT1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AFT09MS015NT1

Manufacturer:: NXP USA Inc.

Ventron No:: 2475060-AFT09MS015NT1

Description:: FET RF 40V 870MHZ PLD

ECAD Model:

Datasheet:: AFT09MS015NT1

Specifications

NXP USA Inc. AFT09MS015NT1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT09MS015NT1.

Factory Lead Time
10 Weeks
Package / Case
PLD-1.5W
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
40V
HTS Code
8541.29.00.40
Peak Reflow Temperature (Cel)
260
Frequency
870MHz
Time@Peak Reflow Temperature-Max (s)
40
Current - Test
100mA
Transistor Type
LDMOS
Gain
17.2dB
Power - Output
16W
Voltage - Test
12.5V
RoHS Status
ROHS3 Compliant

Description

AFT09MS015NT1 Description AFT09MS015NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFT09MS015NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT09MS015NT1 has the common source configuration. AFT09MS015NT1 Features Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging AFT09MS015NT1 Applications ISM applications DC large signal applications

AFT09MS015NT1 More Descriptions

RF Power Transistor, 0.136 to 0.941 GHz, 16 W, 17.2 dB, 12.5 V, PLD-1.5W, LDMOS
AFT09MSx Series 40 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2
TRANSISTOR, RF, 30V, PLD-1.5W-2; Drain Source Voltage Vds: 40VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 125W; Operating Frequency Min: 136MHz; Operating Frequency Max: 941MHz; RF Transistor Case: PLD-1.5W; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to AFT09MS015NT1.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Voltage - Rated

HTS Code

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Current - Test

Transistor Type

Gain

Power - Output

Voltage - Test

RoHS Status

Subcategory

Operating Temperature (Max)

Configuration

Polarity/Channel Type

FET Technology

Power Dissipation-Max (Abs)

View Compare
AFT09MS015NT1

NXP USA Inc.

10 Weeks

PLD-1.5W

Tape & Reel (TR)

2009

e3

Active

3 (168 Hours)

EAR99

Matte Tin (Sn)

40V

8541.29.00.40

260

870MHz

40

100mA

LDMOS

17.2dB

16W

12.5V

ROHS3 Compliant

-

-

-

-

-

-

-
AFT09S282NR3

NXP USA Inc.

10 Weeks

OM-780-2

Tape & Reel (TR)

2012

e3

Active

3 (168 Hours)

EAR99

Matte Tin (Sn)

70V

8541.29.00.40

260

960MHz

40

1.4A

LDMOS

20dB

80W

28V

ROHS3 Compliant

FET General Purpose Power

150°C

Single

N-CHANNEL

METAL-OXIDE SEMICONDUCTOR

-

AFT09MS015NT1 vs AFT09S282NR3
AFT09MP055NR1

NXP USA Inc.

10 Weeks

TO-270AB

Tape & Reel (TR)

2013

e3

Active

3 (168 Hours)

EAR99

Matte Tin (Sn)

40V

8541.29.00.40

260

870MHz

40

550mA

LDMOS

15.7dB

1W

12.5V

ROHS3 Compliant

FET General Purpose Power

150°C

-

N-CHANNEL

METAL-OXIDE SEMICONDUCTOR

625W

AFT09MS015NT1 vs AFT09MP055NR1
AFT05MS003NT1

NXP USA Inc.

10 Weeks

TO-243AA

Tape & Reel (TR)

2014

e3

Active

1 (Unlimited)

EAR99

Tin (Sn)

30V

8541.29.00.75

NOT SPECIFIED

520MHz

NOT SPECIFIED

100mA

LDMOS

20.8dB

3W

7.5V

ROHS3 Compliant

-

-

-

-

-

-

AFT09MS015NT1 vs AFT05MS003NT1