IDT, Integrated Device Technology Inc 71V416L10YG8
- Part Number:
- 71V416L10YG8
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3836014-71V416L10YG8
- Description:
- IC SRAM 4MBIT 10NS 44SOJ
- ECAD Model:
-
- Datasheet:
- 71V416L10YG8
IDT, Integrated Device Technology Inc 71V416L10YG8 technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71V416L10YG8.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case44-BSOJ (0.400, 10.16mm Width)
- Supplier Device Package44-SOJ
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Asynchronous
- Voltage - Supply3V~3.6V
- Base Part NumberIDT71V416
- Memory Size4Mb 256K x 16
- Memory TypeVolatile
- Access Time10ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page10ns
- RoHS StatusROHS3 Compliant
71V416L10YG8 Overview
This product is a surface mount device with a 44-BSOJ (0.400, 10.16mm Width) package/case. It is currently active and has a moisture sensitivity level of 3 (168 hours). The voltage supply range is 3V~3.6V and it has a memory size of 4Mb 256K x 16. The access time is 10ns and it has a parallel memory interface. The write cycle time for each word or page is 10ns. This product is also compliant with ROHS3 regulations.
71V416L10YG8 Features
Package / Case: 44-BSOJ (0.400, 10.16mm Width)
71V416L10YG8 Applications
There are a lot of Renesas Electronics America Inc.
71V416L10YG8 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
This product is a surface mount device with a 44-BSOJ (0.400, 10.16mm Width) package/case. It is currently active and has a moisture sensitivity level of 3 (168 hours). The voltage supply range is 3V~3.6V and it has a memory size of 4Mb 256K x 16. The access time is 10ns and it has a parallel memory interface. The write cycle time for each word or page is 10ns. This product is also compliant with ROHS3 regulations.
71V416L10YG8 Features
Package / Case: 44-BSOJ (0.400, 10.16mm Width)
71V416L10YG8 Applications
There are a lot of Renesas Electronics America Inc.
71V416L10YG8 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
71V416L10YG8 More Descriptions
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
IC SRAM 4MBIT PARALLEL 44SOJ
SOJ-44 SRAM ROHS
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
IC SRAM 4MBIT PARALLEL 44SOJ
SOJ-44 SRAM ROHS
The three parts on the right have similar specifications to 71V416L10YG8.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusView Compare
-
71V416L10YG813 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)44-SOJ0°C~70°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Asynchronous3V~3.6VIDT71V4164Mb 256K x 16Volatile10nsSRAMParallel10nsROHS3 Compliant- -
13 WeeksSurface Mount48-TFBGA48-CABGA (9x9)0°C~70°C TATrayActive4 (72 Hours)SRAM - Asynchronous3V~3.6VIDT71V4164Mb 256K x 16Volatile10nsSRAMParallel10nsNon-RoHS Compliant
-
8 WeeksSurface Mount48-TFBGA48-CABGA (9x9)-40°C~85°C TATrayActive3 (168 Hours)SRAM - Asynchronous3V~3.6VIDT71V4164Mb 256K x 16Volatile12nsSRAMParallel12nsROHS3 Compliant
-
10 WeeksSurface Mount48-TFBGA48-CABGA (9x9)0°C~70°C TATrayActive3 (168 Hours)SRAM - Asynchronous3V~3.6VIDT71V4164Mb 256K x 16Volatile12nsSRAMParallel12nsROHS3 Compliant
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