IDT, Integrated Device Technology Inc 71V416L12BEGI
- Part Number:
- 71V416L12BEGI
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3836049-71V416L12BEGI
- Description:
- IC SRAM 4MBIT 12NS 48CABGA
- Datasheet:
- 71V416L12BEGI
IDT, Integrated Device Technology Inc 71V416L12BEGI technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71V416L12BEGI.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Supplier Device Package48-CABGA (9x9)
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Asynchronous
- Voltage - Supply3V~3.6V
- Base Part NumberIDT71V416
- Memory Size4Mb 256K x 16
- Memory TypeVolatile
- Access Time12ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page12ns
- RoHS StatusROHS3 Compliant
71V416L12BEGI Overview
The package or case for this product is a 48-TFBGA, which provides a compact and efficient solution for memory storage. It has an operating temperature range of -40°C to 85°C, making it suitable for use in a wide variety of environments. The packaging for this product is in a tray form, ensuring safe transportation and storage. Its part status is active, meaning it is currently in production and available for purchase. With a moisture sensitivity level of 3 (168 hours), this product is protected against any potential damage caused by exposure to moisture. Its technology is SRAM - asynchronous, providing fast and efficient data access. The voltage supply for this product ranges from 3V to 3.6V, ensuring stable and reliable performance. It is a volatile memory type, meaning it requires continuous power to retain data. The memory format is SRAM, which offers high-speed data access. Additionally, the write cycle time for this product is 12ns, making it a quick and efficient solution for data storage needs.
71V416L12BEGI Features
Package / Case: 48-TFBGA
71V416L12BEGI Applications
There are a lot of Renesas Electronics America Inc.
71V416L12BEGI Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
The package or case for this product is a 48-TFBGA, which provides a compact and efficient solution for memory storage. It has an operating temperature range of -40°C to 85°C, making it suitable for use in a wide variety of environments. The packaging for this product is in a tray form, ensuring safe transportation and storage. Its part status is active, meaning it is currently in production and available for purchase. With a moisture sensitivity level of 3 (168 hours), this product is protected against any potential damage caused by exposure to moisture. Its technology is SRAM - asynchronous, providing fast and efficient data access. The voltage supply for this product ranges from 3V to 3.6V, ensuring stable and reliable performance. It is a volatile memory type, meaning it requires continuous power to retain data. The memory format is SRAM, which offers high-speed data access. Additionally, the write cycle time for this product is 12ns, making it a quick and efficient solution for data storage needs.
71V416L12BEGI Features
Package / Case: 48-TFBGA
71V416L12BEGI Applications
There are a lot of Renesas Electronics America Inc.
71V416L12BEGI Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
71V416L12BEGI More Descriptions
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)
Asynchronous Active BALL 3-STATE (Memory Format) Memory 85C 3.6V 4Mb 170mA
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
IC SRAM 4MBIT PARALLEL 48CABGA
Asynchronous Active BALL 3-STATE (Memory Format) Memory 85C 3.6V 4Mb 170mA
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
IC SRAM 4MBIT PARALLEL 48CABGA
The three parts on the right have similar specifications to 71V416L12BEGI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusView Compare
-
71V416L12BEGI8 WeeksSurface Mount48-TFBGA48-CABGA (9x9)-40°C~85°C TATrayActive3 (168 Hours)SRAM - Asynchronous3V~3.6VIDT71V4164Mb 256K x 16Volatile12nsSRAMParallel12nsROHS3 Compliant-
-
13 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)-0°C~70°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Asynchronous3V~3.6VIDT71V4164Mb 256K x 16Volatile-SRAMParallel12nsROHS3 Compliant
-
13 WeeksSurface Mount48-TFBGA48-CABGA (9x9)0°C~70°C TATape & Reel (TR)Active4 (72 Hours)SRAM - Asynchronous3V~3.6VIDT71V4164Mb 256K x 16Volatile10nsSRAMParallel10nsNon-RoHS Compliant
-
-Surface Mount48-TFBGA48-CABGA (9x9)0°C~70°C TATape & Reel (TR)Obsolete3 (168 Hours)SRAM - Asynchronous3V~3.6VIDT71V4164Mb 256K x 16Volatile10nsSRAMParallel10nsNon-RoHS Compliant
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