IDT, Integrated Device Technology Inc 71T75602S166BGI8
- Part Number:
- 71T75602S166BGI8
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3724282-71T75602S166BGI8
- Description:
- IC SRAM 18MBIT 166MHZ 119BGA
- ECAD Model:
-
- Datasheet:
- 71T75602S166BGI8
IDT, Integrated Device Technology Inc 71T75602S166BGI8 technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71T75602S166BGI8.
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / Case119-BGA
- Supplier Device Package119-PBGA (14x22)
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Synchronous, SDR (ZBT)
- Voltage - Supply2.375V~2.625V
- Base Part NumberIDT71T75
- Memory Size18Mb 512K x 36
- Memory TypeVolatile
- Clock Frequency166MHz
- Access Time3.5ns
- Memory FormatSRAM
- Memory InterfaceParallel
- RoHS StatusNon-RoHS Compliant
71T75602S166BGI8 Overview
This product features a Surface Mount mounting type and a 119-BGA package/case. The supplier device package is 119-PBGA (14x22) and it has a Moisture Sensitivity Level (MSL) of 3, with a maximum exposure time of 168 hours. It utilizes SRAM technology with a synchronous design and single data rate (SDR) functionality. The voltage supply range is 2.375V to 2.625V and the base part number is IDT71T75. This product has a clock frequency of 166MHz and utilizes a parallel memory interface. It is not compliant with RoHS standards.
71T75602S166BGI8 Features
Package / Case: 119-BGA
71T75602S166BGI8 Applications
There are a lot of Renesas Electronics America Inc.
71T75602S166BGI8 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
This product features a Surface Mount mounting type and a 119-BGA package/case. The supplier device package is 119-PBGA (14x22) and it has a Moisture Sensitivity Level (MSL) of 3, with a maximum exposure time of 168 hours. It utilizes SRAM technology with a synchronous design and single data rate (SDR) functionality. The voltage supply range is 2.375V to 2.625V and the base part number is IDT71T75. This product has a clock frequency of 166MHz and utilizes a parallel memory interface. It is not compliant with RoHS standards.
71T75602S166BGI8 Features
Package / Case: 119-BGA
71T75602S166BGI8 Applications
There are a lot of Renesas Electronics America Inc.
71T75602S166BGI8 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
71T75602S166BGI8 More Descriptions
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
ZBT SRAM, 512KX36, 3.5ns, CMOS, PBGA119
IC SRAM 18MBIT PARALLEL 119PBGA
SRAM X36 18M 2.5V CORE SLOW ZB
ZBT SRAM, 512KX36, 3.5ns, CMOS, PBGA119
IC SRAM 18MBIT PARALLEL 119PBGA
SRAM X36 18M 2.5V CORE SLOW ZB
The three parts on the right have similar specifications to 71T75602S166BGI8.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceRoHS StatusView Compare
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71T75602S166BGI814 WeeksSurface Mount119-BGA119-PBGA (14x22)-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Synchronous, SDR (ZBT)2.375V~2.625VIDT71T7518Mb 512K x 36Volatile166MHz3.5nsSRAMParallelNon-RoHS Compliant- -
10 WeeksSurface Mount100-LQFP100-TQFP (14x14)0°C~70°C TATrayActive3 (168 Hours)SRAM - Synchronous, SDR (ZBT)2.375V~2.625VIDT71T7518Mb 512K x 36Volatile150MHz3.8nsSRAMParallelROHS3 Compliant
-
14 WeeksSurface Mount100-LQFP100-TQFP (14x14)-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Synchronous, SDR (ZBT)2.375V~2.625VIDT71T7518Mb 512K x 36Volatile150MHz3.8nsSRAMParallelROHS3 Compliant
-
14 WeeksSurface Mount119-BGA119-PBGA (14x22)-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Synchronous, SDR (ZBT)2.375V~2.625VIDT71T7518Mb 1M x 18Volatile100MHz5nsSRAMParallelROHS3 Compliant
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