IDT, Integrated Device Technology Inc 71T75602S150PFGI8
- Part Number:
- 71T75602S150PFGI8
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3724245-71T75602S150PFGI8
- Description:
- IC SRAM 18MBIT 150MHZ 100TQFP
- Datasheet:
- 71T75602S150PFGI8
- Payment:
- Delivery:
Description
The 71T75602/71T75802 are high-performance synchronous ZBT™ SRAMs with a 2.5V power supply and 2.5V I/O supply. They are available in 512K x 36 and 1M x 18 memory configurations and support system speeds up to 200 MHz (3.2 ns Clock-to-Data Access).
The ZBT™ feature eliminates dead cycles between write and read cycles, while the internally synchronized output buffer enable eliminates the need to control OE. The single R/W (READ/WRITE) control pin and positive clock-edge triggered address, data, and control signal registers enable fully pipelined applications.
The 71T75602/71T75802 offer a 4-word burst capability (interleaved or linear), individual byte write control, three chip enables for simple depth expansion, and a power down mode controlled by the ZZ input. They are packaged in a JEDEC standard 100-pin plastic thin quad flat pack (TQFP) or 119 ball grid array (BGA) and are available in an industrial temperature range (-40°C to 85°C) for selected speeds.
Features
512K x 36, 1M x 18 memory configurations
Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access)
ZBT™ Feature - No dead cycles between write and read cycles
Internally synchronized output buffer enable eliminates the need to control OE
Single R/W (READ/WRITE) control pin
Positive clock-edge triggered address, data, and control signal registers for fully pipelined applications
4-word burst capability (interleaved or linear)
Individual byte write (BW1 - BW4) control (May tie active)
Three chip enables for simple depth expansion
2.5V power supply (±5%)
2.5V I/O Supply (VDDQ)
Power down controlled by ZZ input
Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)
Packaged in a JEDEC standard 100-pin plastic thin quad flat pack (TQFP), 119 ball grid array (BGA)
Industrial temperature range (-40°C to 85°C) is available for selected speeds
Applications
High-performance computing
Networking
Telecommunications
Industrial automation
Medical imaging
Automotive electronics
The 71T75602/71T75802 are high-performance synchronous ZBT™ SRAMs with a 2.5V power supply and 2.5V I/O supply. They are available in 512K x 36 and 1M x 18 memory configurations and support system speeds up to 200 MHz (3.2 ns Clock-to-Data Access).
The ZBT™ feature eliminates dead cycles between write and read cycles, while the internally synchronized output buffer enable eliminates the need to control OE. The single R/W (READ/WRITE) control pin and positive clock-edge triggered address, data, and control signal registers enable fully pipelined applications.
The 71T75602/71T75802 offer a 4-word burst capability (interleaved or linear), individual byte write control, three chip enables for simple depth expansion, and a power down mode controlled by the ZZ input. They are packaged in a JEDEC standard 100-pin plastic thin quad flat pack (TQFP) or 119 ball grid array (BGA) and are available in an industrial temperature range (-40°C to 85°C) for selected speeds.
Features
512K x 36, 1M x 18 memory configurations
Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access)
ZBT™ Feature - No dead cycles between write and read cycles
Internally synchronized output buffer enable eliminates the need to control OE
Single R/W (READ/WRITE) control pin
Positive clock-edge triggered address, data, and control signal registers for fully pipelined applications
4-word burst capability (interleaved or linear)
Individual byte write (BW1 - BW4) control (May tie active)
Three chip enables for simple depth expansion
2.5V power supply (±5%)
2.5V I/O Supply (VDDQ)
Power down controlled by ZZ input
Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)
Packaged in a JEDEC standard 100-pin plastic thin quad flat pack (TQFP), 119 ball grid array (BGA)
Industrial temperature range (-40°C to 85°C) is available for selected speeds
Applications
High-performance computing
Networking
Telecommunications
Industrial automation
Medical imaging
Automotive electronics
IDT, Integrated Device Technology Inc 71T75602S150PFGI8 technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71T75602S150PFGI8.
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / Case100-LQFP
- Supplier Device Package100-TQFP (14x14)
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Synchronous, SDR (ZBT)
- Voltage - Supply2.375V~2.625V
- Base Part NumberIDT71T75
- Memory Size18Mb 512K x 36
- Memory TypeVolatile
- Clock Frequency150MHz
- Access Time3.8ns
- Memory FormatSRAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
The three parts on the right have similar specifications to 71T75602S150PFGI8.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceRoHS StatusView Compare
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71T75602S150PFGI814 WeeksSurface Mount100-LQFP100-TQFP (14x14)-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Synchronous, SDR (ZBT)2.375V~2.625VIDT71T7518Mb 512K x 36Volatile150MHz3.8nsSRAMParallelROHS3 Compliant-
-
14 WeeksSurface Mount119-BGA119-PBGA (14x22)-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Synchronous, SDR (ZBT)2.375V~2.625VIDT71T7518Mb 512K x 36Volatile166MHz3.5nsSRAMParallelNon-RoHS Compliant
-
14 WeeksSurface Mount119-BGA119-PBGA (14x22)-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Synchronous, SDR (ZBT)2.375V~2.625VIDT71T7518Mb 512K x 36Volatile150MHz3.8nsSRAMParallelROHS3 Compliant
-
14 WeeksSurface Mount119-BGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Synchronous, SDR (ZBT)2.375V~2.625VIDT71T7518Mb 1M x 18Volatile100MHz5nsSRAMParallelNon-RoHS Compliant
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