IDT, Integrated Device Technology Inc 71256S35DB

Name: 71256S35DB
Brand: IDT, Integrated Device Technology Inc
SKU: 3836062-71256S35DB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 71256S35DB

Manufacturer:: IDT, Integrated Device Technology Inc

Ventron No:: 3836062-71256S35DB

Description:: IC SRAM 256KBIT 35NS 28CDIP

ECAD Model:

Datasheet:: 71256S35DB

Specifications

IDT, Integrated Device Technology Inc 71256S35DB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71256S35DB.

Factory Lead Time
11 Weeks
Mounting Type
Through Hole
Package / Case
28-CDIP (0.600, 15.24mm)
Supplier Device Package
28-CerDip
Operating Temperature
-55°C~125°C TA
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
SRAM - Asynchronous
Voltage - Supply
4.5V~5.5V
Memory Size
256Kb 32K x 8
Memory Type
Volatile
Access Time
35ns
Memory Format
SRAM
Memory Interface
Parallel
Write Cycle Time - Word, Page
35ns
RoHS Status
Non-RoHS Compliant

Description

71256S35DB Overview
The package or case for this device is a 28-CDIP (0.600, 15.24mm) which is supplied as a 28-CerDip. It has an operating temperature range of -55°C to 125°C TA and is packaged in a tube. This device is currently active and has a memory size of 256Kb, specifically 32K x 8. The access time for this device is 35ns, making it a fast and efficient option for memory storage. The memory format for this device is SRAM and it has a parallel memory interface. It is important to note that this device is currently non-RoHS compliant, meaning it does not meet the standards for environmentally friendly materials.

71256S35DB Features
Package / Case: 28-CDIP (0.600, 15.24mm)

71256S35DB Applications
There are a lot of Renesas Electronics America Inc.
71256S35DB Memory applications.

Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications

71256S35DB More Descriptions

Asynchronous Active 3-STATE 2011 (Memory Format) Memory 125C 5.5V 256kb 140mA
SRAM Chip Async Single 5V 256K-Bit 32K x 8 35ns 28-Pin CDIP
5.0V 32K x 8 Asynchronous Static RAM
IC SRAM 256KBIT PARALLEL 28CDIP

Product Comparison

The three parts on the right have similar specifications to 71256S35DB.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Memory Size

Memory Type

Access Time

Memory Format

Memory Interface

Write Cycle Time - Word, Page

RoHS Status

Base Part Number

View Compare
71256S35DB

IDT, Integrated Device Technology Inc

11 Weeks

Through Hole

28-CDIP (0.600, 15.24mm)

28-CerDip

-55°C~125°C TA

Tube

Active

1 (Unlimited)

SRAM - Asynchronous

4.5V~5.5V

256Kb 32K x 8

Volatile

35ns

SRAM

Parallel

35ns

Non-RoHS Compliant

-

-
71256L25YGI8

IDT, Integrated Device Technology Inc

15 Weeks

Surface Mount

28-BSOJ (0.300, 7.62mm Width)

28-SOJ

-40°C~85°C TA

Tape & Reel (TR)

Active

3 (168 Hours)

SRAM - Asynchronous

4.5V~5.5V

256Kb 32K x 8

Volatile

25ns

SRAM

Parallel

25ns

ROHS3 Compliant

IDT71256

71256S35DB vs 71256L25YGI8
71256SA12TPG

IDT, Integrated Device Technology Inc

15 Weeks

Through Hole

28-DIP (0.300, 7.62mm)

28-PDIP

0°C~70°C TA

Tube

Active

1 (Unlimited)

SRAM - Asynchronous

4.5V~5.5V

256Kb 32K x 8

Volatile

12ns

SRAM

Parallel

12ns

ROHS3 Compliant

IDT71256

71256S35DB vs 71256SA12TPG
71256L70TDB

IDT, Integrated Device Technology Inc

15 Weeks

Through Hole

28-CDIP (0.300, 7.62mm)

-

-55°C~125°C TA

Tube

Active

1 (Unlimited)

SRAM - Asynchronous

4.5V~5.5V

256Kb 32K x 8

Volatile

-

SRAM

Parallel

70ns

ROHS3 Compliant

-

71256S35DB vs 71256L70TDB