IDT, Integrated Device Technology Inc 71256S55TDB
- Part Number:
- 71256S55TDB
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3724172-71256S55TDB
- Description:
- IC SRAM 256KBIT 55NS 28CDIP
- Datasheet:
- 71256S55TDB
IDT, Integrated Device Technology Inc 71256S55TDB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71256S55TDB.
- Factory Lead Time15 Weeks
- Mounting TypeThrough Hole
- Package / Case28-CDIP (0.300, 7.62mm)
- Operating Temperature-55°C~125°C TA
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Memory Size256Kb 32K x 8
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page55ns
- RoHS StatusNon-RoHS Compliant
71256S55TDB Overview
The mounting type for this particular component is Through Hole, which means it can be easily mounted onto a circuit board. The package or case size is 28-CDIP (0.300, 7.62mm), which indicates the dimensions of the component. It is packaged in a tube, making it convenient for storage and transportation. The Moisture Sensitivity Level (MSL) for this component is 1, which means it can be exposed to unlimited moisture without any adverse effects. The technology used in this component is SRAM - Asynchronous, which allows for fast and efficient data storage. It requires a voltage supply of 4.5V~5.5V and has a memory size of 256Kb 32K x 8. The memory interface is parallel, allowing for simultaneous data transfer. The write cycle time for this component is 55ns, making it a quick and reliable option. However, it is important to note that this component is non-RoHS compliant, meaning it does not meet the standards for environmentally friendly materials.
71256S55TDB Features
Package / Case: 28-CDIP (0.300, 7.62mm)
71256S55TDB Applications
There are a lot of Renesas Electronics America Inc.
71256S55TDB Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The mounting type for this particular component is Through Hole, which means it can be easily mounted onto a circuit board. The package or case size is 28-CDIP (0.300, 7.62mm), which indicates the dimensions of the component. It is packaged in a tube, making it convenient for storage and transportation. The Moisture Sensitivity Level (MSL) for this component is 1, which means it can be exposed to unlimited moisture without any adverse effects. The technology used in this component is SRAM - Asynchronous, which allows for fast and efficient data storage. It requires a voltage supply of 4.5V~5.5V and has a memory size of 256Kb 32K x 8. The memory interface is parallel, allowing for simultaneous data transfer. The write cycle time for this component is 55ns, making it a quick and reliable option. However, it is important to note that this component is non-RoHS compliant, meaning it does not meet the standards for environmentally friendly materials.
71256S55TDB Features
Package / Case: 28-CDIP (0.300, 7.62mm)
71256S55TDB Applications
There are a lot of Renesas Electronics America Inc.
71256S55TDB Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
71256S55TDB More Descriptions
SRAM Chip Async Single 5V 256K-Bit 32K x 8 55ns 28-Pin CDIP
5.0V 32K x 8 Asynchronous Static RAM
IC SRAM 256KBIT PARALLEL 28CDIP
5.0V 32K x 8 Asynchronous Static RAM
IC SRAM 256KBIT PARALLEL 28CDIP
The three parts on the right have similar specifications to 71256S55TDB.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSupplier Device PackageAccess TimeBase Part NumberView Compare
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71256S55TDB15 WeeksThrough Hole28-CDIP (0.300, 7.62mm)-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V256Kb 32K x 8VolatileSRAMParallel55nsNon-RoHS Compliant----
-
11 WeeksThrough Hole28-CDIP (0.600, 15.24mm)-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V256Kb 32K x 8VolatileSRAMParallel35nsNon-RoHS Compliant28-CerDip35ns-
-
15 WeeksSurface Mount28-BSOJ (0.300, 7.62mm Width)-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Asynchronous4.5V~5.5V256Kb 32K x 8VolatileSRAMParallel25nsROHS3 Compliant28-SOJ25nsIDT71256
-
15 WeeksThrough Hole28-DIP (0.300, 7.62mm)0°C~70°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V256Kb 32K x 8VolatileSRAMParallel12nsROHS3 Compliant28-PDIP12nsIDT71256
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