IDT, Integrated Device Technology Inc 71256S25TDB
- Part Number:
- 71256S25TDB
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3238537-71256S25TDB
- Description:
- IC SRAM 256KBIT 25NS 28CDIP
- Datasheet:
- 71256S25TDB
IDT, Integrated Device Technology Inc 71256S25TDB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71256S25TDB.
- Factory Lead Time15 Weeks
- Mounting TypeThrough Hole
- Package / Case28-CDIP (0.300, 7.62mm)
- Operating Temperature-55°C~125°C TA
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Memory Size256Kb 32K x 8
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page25ns
- RoHS StatusNon-RoHS Compliant
71256S25TDB Overview
The mounting type for this electronic component is through hole, meaning it is designed to be inserted into a circuit board through a hole and soldered in place. The package or case for this component is 28-CDIP (0.300, 7.62mm), which refers to its physical dimensions and shape. It is packaged in a tube for protection during shipping and storage. This component is currently active and in production, as indicated by its part status. It has a moisture sensitivity level of 1, which means it can be exposed to unlimited levels of moisture without damaging its functionality. The technology used in this component is SRAM - asynchronous, which refers to its ability to store data even without a clock signal. It requires a voltage supply of 4.5V~5.5V and has a memory size of 256Kb 32K x 8, meaning it can store 256 kilobits of data in a 32 kilobyte by 8-bit configuration. This memory is volatile, meaning it requires a constant power supply to retain its data. The write cycle time for this component is 25ns, indicating the speed at which data can be written to it in word or page form.
71256S25TDB Features
Package / Case: 28-CDIP (0.300, 7.62mm)
71256S25TDB Applications
There are a lot of Renesas Electronics America Inc.
71256S25TDB Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
The mounting type for this electronic component is through hole, meaning it is designed to be inserted into a circuit board through a hole and soldered in place. The package or case for this component is 28-CDIP (0.300, 7.62mm), which refers to its physical dimensions and shape. It is packaged in a tube for protection during shipping and storage. This component is currently active and in production, as indicated by its part status. It has a moisture sensitivity level of 1, which means it can be exposed to unlimited levels of moisture without damaging its functionality. The technology used in this component is SRAM - asynchronous, which refers to its ability to store data even without a clock signal. It requires a voltage supply of 4.5V~5.5V and has a memory size of 256Kb 32K x 8, meaning it can store 256 kilobits of data in a 32 kilobyte by 8-bit configuration. This memory is volatile, meaning it requires a constant power supply to retain its data. The write cycle time for this component is 25ns, indicating the speed at which data can be written to it in word or page form.
71256S25TDB Features
Package / Case: 28-CDIP (0.300, 7.62mm)
71256S25TDB Applications
There are a lot of Renesas Electronics America Inc.
71256S25TDB Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
71256S25TDB More Descriptions
SRAM Chip Async Single 5V 256K-Bit 32K x 8 25ns 28-Pin CDIP
5.0V 32K x 8 Asynchronous Static RAM
IC SRAM 256KBIT PARALLEL 28CDIP
5.0V 32K x 8 Asynchronous Static RAM
IC SRAM 256KBIT PARALLEL 28CDIP
The three parts on the right have similar specifications to 71256S25TDB.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSupplier Device PackageBase Part NumberAccess TimeView Compare
-
71256S25TDB15 WeeksThrough Hole28-CDIP (0.300, 7.62mm)-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V256Kb 32K x 8VolatileSRAMParallel25nsNon-RoHS Compliant----
-
15 WeeksSurface Mount28-BSOJ (0.300, 7.62mm Width)-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Asynchronous4.5V~5.5V256Kb 32K x 8VolatileSRAMParallel25nsROHS3 Compliant28-SOJIDT7125625ns
-
15 WeeksThrough Hole28-DIP (0.300, 7.62mm)0°C~70°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V256Kb 32K x 8VolatileSRAMParallel12nsROHS3 Compliant28-PDIPIDT7125612ns
-
15 WeeksThrough Hole28-CDIP (0.300, 7.62mm)-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V256Kb 32K x 8VolatileSRAMParallel70nsROHS3 Compliant---
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