IDT, Integrated Device Technology Inc 70T633S12BFGI8
- Part Number:
- 70T633S12BFGI8
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3836693-70T633S12BFGI8
- Description:
- IC SRAM 9MBIT 12NS 208FBGA
- Datasheet:
- 70T633S12BFGI8
IDT, Integrated Device Technology Inc 70T633S12BFGI8 technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 70T633S12BFGI8.
- Factory Lead Time18 Weeks
- Mounting TypeSurface Mount
- Package / Case208-LFBGA
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Dual Port, Asynchronous
- Voltage - Supply2.4V~2.6V
- Base Part NumberIDT70T633
- Memory Size9Mb 512K x 18
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page12ns
- RoHS StatusROHS3 Compliant
70T633S12BFGI8 Overview
This product is packaged in Tape & Reel (TR) form and is currently in Active status. It falls under the technology category of SRAM - Dual Port, Asynchronous and requires a voltage supply of 2.4V~2.6V. Its base part number is IDT70T633 and it has a memory size of 9Mb 512K x 18. The memory type is Volatile and the format is SRAM. The memory interface is Parallel and the write cycle time for both word and page is 12ns.
70T633S12BFGI8 Features
Package / Case: 208-LFBGA
70T633S12BFGI8 Applications
There are a lot of Renesas Electronics America Inc.
70T633S12BFGI8 Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
This product is packaged in Tape & Reel (TR) form and is currently in Active status. It falls under the technology category of SRAM - Dual Port, Asynchronous and requires a voltage supply of 2.4V~2.6V. Its base part number is IDT70T633 and it has a memory size of 9Mb 512K x 18. The memory type is Volatile and the format is SRAM. The memory interface is Parallel and the write cycle time for both word and page is 12ns.
70T633S12BFGI8 Features
Package / Case: 208-LFBGA
70T633S12BFGI8 Applications
There are a lot of Renesas Electronics America Inc.
70T633S12BFGI8 Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
70T633S12BFGI8 More Descriptions
SRAM Chip Async Dual 2.5V 9M-Bit 512K x 18 12ns 208-Pin CABGA T/R
512K x 18, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's
IC SRAM 9MBIT PARALLEL 208CABGA
512K x 18, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's
IC SRAM 9MBIT PARALLEL 208CABGA
The three parts on the right have similar specifications to 70T633S12BFGI8.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSupplier Device PackageAccess TimeView Compare
-
70T633S12BFGI818 WeeksSurface Mount208-LFBGA-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Dual Port, Asynchronous2.4V~2.6VIDT70T6339Mb 512K x 18VolatileSRAMParallel12nsROHS3 Compliant---
-
12 WeeksSurface Mount256-LBGA0°C~70°C TATrayActive3 (168 Hours)SRAM - Dual Port, Asynchronous2.4V~2.6VIDT70T6339Mb 512K x 18VolatileSRAMParallel12nsNon-RoHS Compliant256-CABGA (17x17)12ns
-
12 WeeksSurface Mount208-LFBGA0°C~70°C TATrayActive4 (72 Hours)SRAM - Dual Port, Asynchronous2.4V~2.6VIDT70T6314.5Mb 256K x 18VolatileSRAMParallel15nsNon-RoHS Compliant208-CABGA (15x15)15ns
-
12 WeeksSurface Mount256-LBGA-40°C~85°C TATrayActive3 (168 Hours)SRAM - Dual Port, Asynchronous2.4V~2.6VIDT70T6314.5Mb 256K x 18VolatileSRAMParallel10nsNon-RoHS Compliant256-CABGA (17x17)10ns
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