IDT, Integrated Device Technology Inc 70T631S10BCI
- Part Number:
- 70T631S10BCI
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3836669-70T631S10BCI
- Description:
- IC SRAM 4.5MBIT 10NS 256CABGA
- Datasheet:
- IDT Suffixes
IDT, Integrated Device Technology Inc 70T631S10BCI technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 70T631S10BCI.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case256-LBGA
- Supplier Device Package256-CABGA (17x17)
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Dual Port, Asynchronous
- Voltage - Supply2.4V~2.6V
- Base Part NumberIDT70T631
- Memory Size4.5Mb 256K x 18
- Memory TypeVolatile
- Access Time10ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page10ns
- RoHS StatusNon-RoHS Compliant
70T631S10BCI Overview
The package or case for this particular circuit is a 256-LBGA, which stands for Land Grid Array Ball Grid Array. The packaging for this circuit comes in a tray form, making it easy to transport and store. The part status is active, meaning that it is currently in production and readily available for purchase. The technology used in this circuit is SRAM, which stands for Static Random Access Memory. It is a dual port and asynchronous type of SRAM, meaning that it can access data from two different sources at the same time and does not require a clock signal. The base part number is IDT70T631, which is a unique identifier for this specific circuit. The memory size is 4.5Mb, with a capacity of 256K x 18 bits. It is a volatile type of memory, meaning that it requires power to retain data. The access time for this memory is 10ns, which is the time it takes for the memory to retrieve data. The memory format is SRAM, and it uses a parallel interface for data transfer.
70T631S10BCI Features
Package / Case: 256-LBGA
70T631S10BCI Applications
There are a lot of Renesas Electronics America Inc.
70T631S10BCI Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
The package or case for this particular circuit is a 256-LBGA, which stands for Land Grid Array Ball Grid Array. The packaging for this circuit comes in a tray form, making it easy to transport and store. The part status is active, meaning that it is currently in production and readily available for purchase. The technology used in this circuit is SRAM, which stands for Static Random Access Memory. It is a dual port and asynchronous type of SRAM, meaning that it can access data from two different sources at the same time and does not require a clock signal. The base part number is IDT70T631, which is a unique identifier for this specific circuit. The memory size is 4.5Mb, with a capacity of 256K x 18 bits. It is a volatile type of memory, meaning that it requires power to retain data. The access time for this memory is 10ns, which is the time it takes for the memory to retrieve data. The memory format is SRAM, and it uses a parallel interface for data transfer.
70T631S10BCI Features
Package / Case: 256-LBGA
70T631S10BCI Applications
There are a lot of Renesas Electronics America Inc.
70T631S10BCI Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
70T631S10BCI More Descriptions
SRAM Chip Async Dual 2.5V 4.5M-Bit 256K x 18 10ns 256-Pin CABGA
256K x 18, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's
IC SRAM 4.5M PARALLEL 256CABGA
IC EEPROM 256K PARALLEL 32CLCC
256K x 18, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's
IC SRAM 4.5M PARALLEL 256CABGA
IC EEPROM 256K PARALLEL 32CLCC
The three parts on the right have similar specifications to 70T631S10BCI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusView Compare
-
70T631S10BCI12 WeeksSurface Mount256-LBGA256-CABGA (17x17)-40°C~85°C TATrayActive3 (168 Hours)SRAM - Dual Port, Asynchronous2.4V~2.6VIDT70T6314.5Mb 256K x 18Volatile10nsSRAMParallel10nsNon-RoHS Compliant-
-
18 WeeksSurface Mount208-LFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Dual Port, Asynchronous2.4V~2.6VIDT70T6339Mb 512K x 18Volatile-SRAMParallel12nsROHS3 Compliant
-
18 WeeksSurface Mount208-LFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Dual Port, Asynchronous2.4V~2.6VIDT70T6519Mb 256K x 36Volatile-SRAMParallel12nsROHS3 Compliant
-
18 WeeksSurface Mount208-LFBGA208-CABGA (15x15)-40°C~85°C TATrayActive4 (72 Hours)SRAM - Dual Port, Asynchronous2.4V~2.6VIDT70T6519Mb 256K x 36Volatile10nsSRAMParallel10nsNon-RoHS Compliant
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