| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
NVMFS5834NLWFT1G |
NVMFS5832NLWFT1G |
| Manufacturer: |
ON Semiconductor |
ON Semiconductor |
| Description: |
MOSFET N-CH 40V 75A SO8FL |
MOSFET N-CH 40V 120A SO8FL |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Lifecycle Status |
ACTIVE, NOT REC (Last Updated: 4 days ago) |
ACTIVE, NOT REC (Last Updated: 4 days ago) |
| Factory Lead Time |
38 Weeks |
38 Weeks |
| Package / Case |
DFN |
8-PowerTDFN |
| Surface Mount |
YES |
YES |
| Number of Pins |
5 |
5 |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Published |
2012 |
2013 |
| JESD-609 Code |
e3 |
e3 |
| Pbfree Code |
yes |
yes |
| Part Status |
Active |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
5 |
- |
| ECCN Code |
EAR99 |
EAR99 |
| Terminal Finish |
Tin (Sn) |
Tin (Sn) |
| Max Operating Temperature |
175°C |
- |
| Min Operating Temperature |
-55°C |
- |
| Subcategory |
FET General Purpose Power |
FET General Purpose Power |
| Max Power Dissipation |
3.6W |
- |
| Terminal Position |
DUAL |
- |
| Terminal Form |
FLAT |
- |
| Pin Count |
5 |
5 |
| Number of Elements |
1 |
- |
| Number of Channels |
1 |
1 |
| Element Configuration |
Single |
Single |
| Operating Mode |
ENHANCEMENT MODE |
- |
| Case Connection |
DRAIN |
- |
| Turn On Delay Time |
10 ns |
13 ns |
| Halogen Free |
Halogen Free |
Halogen Free |
| Rise Time |
56.4ns |
24ns |
| Drain to Source Voltage (Vdss) |
40V |
40V |
| Polarity/Channel Type |
N-CHANNEL |
- |
| Fall Time (Typ) |
6.6 ns |
8 ns |
| Turn-Off Delay Time |
17.4 ns |
27 ns |
| Continuous Drain Current (ID) |
75A |
120A |
| Gate to Source Voltage (Vgs) |
20V |
20V |
| Pulsed Drain Current-Max (IDM) |
276A |
- |
| Input Capacitance |
1.231nF |
- |
| Avalanche Energy Rating (Eas) |
48 mJ |
- |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
- |
| Drain to Source Resistance |
9.3mOhm |
- |
| Rds On Max |
9.3 mΩ |
- |
| Radiation Hardening |
No |
No |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Lead Free |
| Mounting Type |
- |
Surface Mount |
| Operating Temperature |
- |
-55°C~175°C TJ |
| Technology |
- |
MOSFET (Metal Oxide) |
| Power Dissipation-Max |
- |
3.7W Ta 127W Tc |
| FET Type |
- |
N-Channel |
| Rds On (Max) @ Id, Vgs |
- |
4.2m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
- |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
2700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
- |
21A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
- |
51nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) |
- |
4.5V 10V |
| Vgs (Max) |
- |
±20V |
| Submit RFQ: |
Submit |
Submit |
