ON Semiconductor NVMFS5834NLWFT1G

NVMFS5834NLWFT1G Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 48 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 75A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 17.4 ns.Peak drain current is 276A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 9.3mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 40V is required between drain and source (Vdss).

NVMFS5834NLWFT1G Features
the avalanche energy rating (Eas) is 48 mJ
a continuous drain current (ID) of 75A
the turn-off delay time is 17.4 ns
based on its rated peak drain current 276A.
single MOSFETs transistor is 9.3mOhm
a 40V drain to source voltage (Vdss)


NVMFS5834NLWFT1G Applications
There are a lot of ON Semiconductor
NVMFS5834NLWFT1G applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies