| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
NVMFS5C430NLWFT3G |
NVMFS5826NLT3G |
| Manufacturer: |
ON Semiconductor |
ON Semiconductor |
| Description: |
MOSFET N-CH 40V 200A SO8FL |
MOSFET N-CH 60V 26A SO8FL |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Lifecycle Status |
ACTIVE, NOT REC (Last Updated: 3 days ago) |
ACTIVE, NOT REC (Last Updated: 3 days ago) |
| Factory Lead Time |
38 Weeks |
38 Weeks |
| Mount |
Surface Mount |
- |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
8-PowerTDFN |
8-PowerTDFN |
| Number of Pins |
8 |
5 |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Published |
2015 |
2013 |
| JESD-609 Code |
e3 |
e3 |
| Pbfree Code |
yes |
yes |
| Part Status |
Discontinued |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
5 |
5 |
| Terminal Finish |
Tin (Sn) |
Tin (Sn) |
| Technology |
MOSFET (Metal Oxide) |
MOSFET (Metal Oxide) |
| Terminal Position |
DUAL |
DUAL |
| Terminal Form |
FLAT |
FLAT |
| Reach Compliance Code |
not_compliant |
not_compliant |
| Reference Standard |
AEC-Q101 |
- |
| JESD-30 Code |
R-PDSO-F5 |
- |
| Number of Elements |
1 |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
- |
| Power Dissipation-Max |
3.8W Ta 110W Tc |
3.6W Ta 39W Tc |
| Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
DRAIN |
| FET Type |
N-Channel |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.5m Ω @ 50A, 10V |
24m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4300pF @ 20V |
850pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
4.5V 10V |
| Vgs (Max) |
±20V |
±20V |
| Drain-source On Resistance-Max |
0.0022Ohm |
0.032Ohm |
| Pulsed Drain Current-Max (IDM) |
900A |
- |
| DS Breakdown Voltage-Min |
40V |
60V |
| Avalanche Energy Rating (Eas) |
493 mJ |
20 mJ |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Lead Free |
| Surface Mount |
- |
YES |
| ECCN Code |
- |
EAR99 |
| Subcategory |
- |
FET General Purpose Power |
| Peak Reflow Temperature (Cel) |
- |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
- |
NOT SPECIFIED |
| Pin Count |
- |
5 |
| Element Configuration |
- |
Single |
| Power Dissipation |
- |
3.6W |
| Turn On Delay Time |
- |
9 ns |
| Halogen Free |
- |
Halogen Free |
| Current - Continuous Drain (Id) @ 25°C |
- |
8A Ta |
| Rise Time |
- |
32ns |
| Fall Time (Typ) |
- |
24 ns |
| Turn-Off Delay Time |
- |
15 ns |
| Continuous Drain Current (ID) |
- |
8A |
| Gate to Source Voltage (Vgs) |
- |
20V |
| Drain Current-Max (Abs) (ID) |
- |
26A |
| Submit RFQ: |
Submit |
Submit |
