ON Semiconductor NVMFS5C430NLWFT3G
- Part Number:
- NVMFS5C430NLWFT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 4538941-NVMFS5C430NLWFT3G
- Description:
- MOSFET N-CH 40V 200A SO8FL
- Datasheet:
- NVMFS5C430NLWFT3G
ON Semiconductor NVMFS5C430NLWFT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVMFS5C430NLWFT3G.
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 3 days ago)
- Factory Lead Time38 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Reach Compliance Codenot_compliant
- Reference StandardAEC-Q101
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.8W Ta 110W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.5m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4300pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain-source On Resistance-Max0.0022Ohm
- Pulsed Drain Current-Max (IDM)900A
- DS Breakdown Voltage-Min40V
- Avalanche Energy Rating (Eas)493 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NVMFS5C430NLWFT3G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 493 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 20V.There is a peak drain current of 900A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NVMFS5C430NLWFT3G Features
the avalanche energy rating (Eas) is 493 mJ
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)
NVMFS5C430NLWFT3G Applications
There are a lot of ON Semiconductor
NVMFS5C430NLWFT3G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 493 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 20V.There is a peak drain current of 900A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NVMFS5C430NLWFT3G Features
the avalanche energy rating (Eas) is 493 mJ
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)
NVMFS5C430NLWFT3G Applications
There are a lot of ON Semiconductor
NVMFS5C430NLWFT3G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NVMFS5C430NLWFT3G More Descriptions
Trans MOSFET N-CH 40V 37A Automotive 5-Pin(4 Tab) SO-FL T/R
Single N-Channel Power MOSFET 40V, 200A, 1.4mΩ Power MOSFET 40 V, 1.5 mohm, 200 A, Single N-Channel Wettable Flank
Power Field-Effect Transistor, 40V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Reel / Nfet So8fl 40V 200A 1.5
Single N-Channel Power MOSFET 40V, 200A, 1.4mΩ Power MOSFET 40 V, 1.5 mohm, 200 A, Single N-Channel Wettable Flank
Power Field-Effect Transistor, 40V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Reel / Nfet So8fl 40V 200A 1.5
The three parts on the right have similar specifications to NVMFS5C430NLWFT3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormReach Compliance CodeReference StandardJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLead FreeECCN CodeSubcategoryCurrent - Continuous Drain (Id) @ 25°CContinuous Drain Current (ID)Surface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountElement ConfigurationPower DissipationTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)SeriesView Compare
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NVMFS5C430NLWFT3GACTIVE, NOT REC (Last Updated: 3 days ago)38 WeeksSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~175°C TJTape & Reel (TR)2015e3yesDiscontinued1 (Unlimited)5Tin (Sn)MOSFET (Metal Oxide)DUALFLATnot_compliantAEC-Q101R-PDSO-F51SINGLE WITH BUILT-IN DIODE3.8W Ta 110W TcENHANCEMENT MODEDRAINN-Channel1.5m Ω @ 50A, 10V2V @ 250μA4300pF @ 20V70nC @ 10V40V4.5V 10V±20V0.0022Ohm900A40V493 mJROHS3 CompliantLead Free-------------------
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ACTIVE (Last Updated: 1 week ago)38 WeeksSurface MountSurface Mount8-PowerTDFN8--55°C~175°C TJTape & Reel (TR)2014e3yesDiscontinued1 (Unlimited)-Tin (Sn)MOSFET (Metal Oxide)--not_compliant---Single3.8W Ta 167W Tc--N-Channel0.9m Ω @ 50A, 10V2V @ 250μA8862pF @ 25V143nC @ 10V40V4.5V 10V±20V----ROHS3 CompliantLead FreeEAR99FET General Purpose Power48A Ta 315A Tc315A--------------
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ACTIVE, NOT REC (Last Updated: 3 days ago)38 Weeks-Surface Mount8-PowerTDFN5SILICON-55°C~175°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)5Tin (Sn)MOSFET (Metal Oxide)DUALFLATnot_compliant--1-3.6W Ta 39W TcENHANCEMENT MODEDRAINN-Channel24m Ω @ 10A, 10V2.5V @ 250μA850pF @ 25V17nC @ 10V60V4.5V 10V±20V0.032Ohm-60V20 mJROHS3 CompliantLead FreeEAR99FET General Purpose Power8A Ta8AYESNOT SPECIFIEDNOT SPECIFIED5Single3.6W9 nsHalogen Free32ns24 ns15 ns20V26A-
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ACTIVE (Last Updated: 1 hour ago)11 Weeks-Surface Mount8-PowerTDFN, 5 Leads---55°C~175°C TJTape & Reel (TR)-e3yesActive1 (Unlimited)-Tin (Sn)MOSFET (Metal Oxide)--not_compliant----200W Tc--N-Channel0.67m Ω @ 50A, 10V2V @ 250μA12168pF @ 25V81nC @ 4.5V40V4.5V 10V±20V----ROHS3 Compliant---370A Tc--26010----------Automotive, AEC-Q101
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