NVMFS5C430NLWFT3G

ON Semiconductor NVMFS5C430NLWFT3G

Part Number:
NVMFS5C430NLWFT3G
Manufacturer:
ON Semiconductor
Ventron No:
4538941-NVMFS5C430NLWFT3G
Description:
MOSFET N-CH 40V 200A SO8FL
ECAD Model:
Datasheet:
NVMFS5C430NLWFT3G

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Specifications
ON Semiconductor NVMFS5C430NLWFT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVMFS5C430NLWFT3G.
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 3 days ago)
  • Factory Lead Time
    38 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Reach Compliance Code
    not_compliant
  • Reference Standard
    AEC-Q101
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    3.8W Ta 110W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.5m Ω @ 50A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4300pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    70nC @ 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain-source On Resistance-Max
    0.0022Ohm
  • Pulsed Drain Current-Max (IDM)
    900A
  • DS Breakdown Voltage-Min
    40V
  • Avalanche Energy Rating (Eas)
    493 mJ
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NVMFS5C430NLWFT3G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 493 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 20V.There is a peak drain current of 900A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NVMFS5C430NLWFT3G Features
the avalanche energy rating (Eas) is 493 mJ
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)


NVMFS5C430NLWFT3G Applications
There are a lot of ON Semiconductor
NVMFS5C430NLWFT3G applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NVMFS5C430NLWFT3G More Descriptions
Trans MOSFET N-CH 40V 37A Automotive 5-Pin(4 Tab) SO-FL T/R
Single N-Channel Power MOSFET 40V, 200A, 1.4mΩ Power MOSFET 40 V, 1.5 mohm, 200 A, Single N-Channel Wettable Flank
Power Field-Effect Transistor, 40V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Reel / Nfet So8fl 40V 200A 1.5
Product Comparison
The three parts on the right have similar specifications to NVMFS5C430NLWFT3G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Reach Compliance Code
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lead Free
    ECCN Code
    Subcategory
    Current - Continuous Drain (Id) @ 25°C
    Continuous Drain Current (ID)
    Surface Mount
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Halogen Free
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Series
    View Compare
  • NVMFS5C430NLWFT3G
    NVMFS5C430NLWFT3G
    ACTIVE, NOT REC (Last Updated: 3 days ago)
    38 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Discontinued
    1 (Unlimited)
    5
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    not_compliant
    AEC-Q101
    R-PDSO-F5
    1
    SINGLE WITH BUILT-IN DIODE
    3.8W Ta 110W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    1.5m Ω @ 50A, 10V
    2V @ 250μA
    4300pF @ 20V
    70nC @ 10V
    40V
    4.5V 10V
    ±20V
    0.0022Ohm
    900A
    40V
    493 mJ
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NVMFS5C410NLWFT3G
    ACTIVE (Last Updated: 1 week ago)
    38 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2014
    e3
    yes
    Discontinued
    1 (Unlimited)
    -
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    -
    not_compliant
    -
    -
    -
    Single
    3.8W Ta 167W Tc
    -
    -
    N-Channel
    0.9m Ω @ 50A, 10V
    2V @ 250μA
    8862pF @ 25V
    143nC @ 10V
    40V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    EAR99
    FET General Purpose Power
    48A Ta 315A Tc
    315A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NVMFS5826NLT3G
    ACTIVE, NOT REC (Last Updated: 3 days ago)
    38 Weeks
    -
    Surface Mount
    8-PowerTDFN
    5
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    5
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    not_compliant
    -
    -
    1
    -
    3.6W Ta 39W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    24m Ω @ 10A, 10V
    2.5V @ 250μA
    850pF @ 25V
    17nC @ 10V
    60V
    4.5V 10V
    ±20V
    0.032Ohm
    -
    60V
    20 mJ
    ROHS3 Compliant
    Lead Free
    EAR99
    FET General Purpose Power
    8A Ta
    8A
    YES
    NOT SPECIFIED
    NOT SPECIFIED
    5
    Single
    3.6W
    9 ns
    Halogen Free
    32ns
    24 ns
    15 ns
    20V
    26A
    -
  • NVMFS5C404NLWFAFT1G
    ACTIVE (Last Updated: 1 hour ago)
    11 Weeks
    -
    Surface Mount
    8-PowerTDFN, 5 Leads
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    -
    not_compliant
    -
    -
    -
    -
    200W Tc
    -
    -
    N-Channel
    0.67m Ω @ 50A, 10V
    2V @ 250μA
    12168pF @ 25V
    81nC @ 4.5V
    40V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    370A Tc
    -
    -
    260
    10
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Automotive, AEC-Q101
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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