Part Number: GP2M010A060H vs GP2M002A065HG
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number: | GP2M010A060H | GP2M002A065HG |
| Manufacturer: | Global Power Technologies Group | Global Power Technologies Group |
| Description: | MOSFET N-CH 600V 10A TO220 | MOSFET N-CH 650V 1.8A TO220 |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Supplier Device Package | TO-220 | TO-220 |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Part Status | Obsolete | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 198W Tc | 52W Tc |
| FET Type | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5A, 10V | 4.6Ohm @ 900mA, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1660pF @ 25V | 353pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 10A Tc | 1.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V | 8.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 10V |
| Vgs (Max) | ±30V | ±30V |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
 |
GP2M005A060HG | Global Power Technologies Group | MOSFET N-CH 600V 4.2A TO220 | Compare |
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GP2M008A060CG | Global Power Technologies Group | MOSFET N-CH 600V 7.5A DPAK | Compare |
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GP2M009A090NG | Global Power Technologies Group | MOSFET N-CH 900V 9A TO3PN | Compare |
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GP2M002A065CG | Global Power Technologies Group | MOSFET N-CH 650V 1.8A DPAK | Compare |
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GP2M002A060CG | Global Power Technologies Group | MOSFET N-CH 600V 2A DPAK | Compare |
