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Part Number: |
TH58BVG3S0HTA00 |
TH58NVG3S0HBAI6 |
Manufacturer: |
Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage |
Description: |
IC EEPROM 4GBIT 25NS 48TSOP |
Memory IC 8mm mm |
Quantity Available: |
Available |
Available |
Datasheets: |
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TH58NVG3S0HBAI6
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Mounting Type |
Surface Mount |
Surface Mount |
Package / Case |
48-TFSOP (0.724, 18.40mm Width) |
67-VFBGA |
Surface Mount |
YES |
YES |
Operating Temperature |
0°C~70°C TA |
-40°C~85°C TA |
Packaging |
Tray |
Tray |
Series |
Benand™ |
- |
Part Status |
Active |
Active |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
3 (168 Hours) |
Number of Terminations |
48 |
67 |
Technology |
FLASH - NAND (SLC) |
FLASH - NAND (SLC) |
Voltage - Supply |
2.7V~3.6V |
2.7V~3.6V |
Terminal Position |
DUAL |
BOTTOM |
Number of Functions |
1 |
1 |
Supply Voltage |
3.3V |
3.3V |
Terminal Pitch |
0.5mm |
0.8mm |
JESD-30 Code |
R-PDSO-G48 |
R-PBGA-B67 |
Supply Voltage-Max (Vsup) |
3.6V |
3.6V |
Supply Voltage-Min (Vsup) |
2.7V |
2.7V |
Memory Size |
8Gb 1G x 8 |
8Gb 1G x 8 |
Memory Type |
Non-Volatile |
Non-Volatile |
Operating Mode |
ASYNCHRONOUS |
ASYNCHRONOUS |
Memory Format |
FLASH |
FLASH |
Memory Interface |
Parallel |
Parallel |
Organization |
1GX8 |
1GX8 |
Memory Width |
8 |
8 |
Write Cycle Time - Word, Page |
25ns |
25ns |
Memory Density |
8589934592 bit |
8589934592 bit |
Programming Voltage |
3.3V |
3V |
Height Seated (Max) |
1.2mm |
1mm |
Length |
18.4mm |
8mm |
Width |
12mm |
6.5mm |
RoHS Status |
RoHS Compliant |
RoHS Compliant |
Submit RFQ: |
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