TH58BVG3S0HTA00

Toshiba Semiconductor and Storage TH58BVG3S0HTA00

Part Number:
TH58BVG3S0HTA00
Manufacturer:
Toshiba Semiconductor and Storage
Ventron No:
3229691-TH58BVG3S0HTA00
Description:
IC EEPROM 4GBIT 25NS 48TSOP
ECAD Model:
Datasheet:
TH58BVG3S0HTA00

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Specifications
Toshiba Semiconductor and Storage TH58BVG3S0HTA00 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58BVG3S0HTA00.
  • Mounting Type
    Surface Mount
  • Package / Case
    48-TFSOP (0.724, 18.40mm Width)
  • Surface Mount
    YES
  • Operating Temperature
    0°C~70°C TA
  • Packaging
    Tray
  • Series
    Benand™
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    48
  • Technology
    FLASH - NAND (SLC)
  • Voltage - Supply
    2.7V~3.6V
  • Terminal Position
    DUAL
  • Number of Functions
    1
  • Supply Voltage
    3.3V
  • Terminal Pitch
    0.5mm
  • JESD-30 Code
    R-PDSO-G48
  • Supply Voltage-Max (Vsup)
    3.6V
  • Supply Voltage-Min (Vsup)
    2.7V
  • Memory Size
    8Gb 1G x 8
  • Memory Type
    Non-Volatile
  • Operating Mode
    ASYNCHRONOUS
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • Organization
    1GX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    25ns
  • Memory Density
    8589934592 bit
  • Programming Voltage
    3.3V
  • Height Seated (Max)
    1.2mm
  • Length
    18.4mm
  • Width
    12mm
  • RoHS Status
    RoHS Compliant
Description
TH58BVG3S0HTA00 Overview
The Benand™ series is a surface mount product with an operating temperature range of 0°C to 70°C TA. It has a moisture sensitivity level of 3 (168 hours) and 48 terminations. The voltage supply for this product is 2.7V to 3.6V and the terminal pitch is 0.5mm. It follows the JESD-30 code of R-PDSO-G48 and has a programming voltage of 3.3V. The length of this product is 18.4mm.

TH58BVG3S0HTA00 Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)


TH58BVG3S0HTA00 Applications
There are a lot of Kioxia America, Inc.
TH58BVG3S0HTA00 Memory applications.


multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
TH58BVG3S0HTA00 More Descriptions
Active GULL WING 2013 Parallel (Memory Format) Memory 70C 2.7V 8589934592bit 12mm
8G(4G x 2)bit, generation: 24nm, ECC logic on the chip, VCC=2.7 to 3.6V
NAND Flash Serial 3.3V 8G-bit 1G x 8 48-Pin TSOP-I
IC FLASH 8GBIT PARALLEL 48TSOP I
EEPROM 8 Gbit CMOS NAND EEPROM
Product Comparison
The three parts on the right have similar specifications to TH58BVG3S0HTA00.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Voltage - Supply
    Terminal Position
    Number of Functions
    Supply Voltage
    Terminal Pitch
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Memory Type
    Operating Mode
    Memory Format
    Memory Interface
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Memory Density
    Programming Voltage
    Height Seated (Max)
    Length
    Width
    RoHS Status
    View Compare
  • TH58BVG3S0HTA00
    TH58BVG3S0HTA00
    Surface Mount
    48-TFSOP (0.724, 18.40mm Width)
    YES
    0°C~70°C TA
    Tray
    Benand™
    Active
    3 (168 Hours)
    48
    FLASH - NAND (SLC)
    2.7V~3.6V
    DUAL
    1
    3.3V
    0.5mm
    R-PDSO-G48
    3.6V
    2.7V
    8Gb 1G x 8
    Non-Volatile
    ASYNCHRONOUS
    FLASH
    Parallel
    1GX8
    8
    25ns
    8589934592 bit
    3.3V
    1.2mm
    18.4mm
    12mm
    RoHS Compliant
    -
  • TH58NVG3S0HBAI4
    Surface Mount
    63-VFBGA
    YES
    -40°C~85°C TA
    Tray
    -
    Active
    3 (168 Hours)
    63
    FLASH - NAND (SLC)
    2.7V~3.6V
    BOTTOM
    1
    3.3V
    0.8mm
    R-PBGA-B63
    3.6V
    2.7V
    8Gb 1G x 8
    Non-Volatile
    ASYNCHRONOUS
    FLASH
    Parallel
    1GX8
    8
    25ns
    8589934592 bit
    3.3V
    1mm
    11mm
    9mm
    RoHS Compliant
  • TH58NYG2S3HBAI6
    Surface Mount
    63-BGA
    -
    -40°C~85°C TA
    Tray
    -
    Active
    3 (168 Hours)
    -
    FLASH - NAND (SLC)
    1.7V~1.95V
    -
    -
    -
    -
    -
    -
    -
    4Gb 512M x 8
    Non-Volatile
    -
    FLASH
    Parallel
    -
    -
    25ns
    -
    -
    -
    -
    -
    RoHS Compliant
  • TH58NVG3S0HBAI6
    Surface Mount
    67-VFBGA
    YES
    -40°C~85°C TA
    Tray
    -
    Active
    3 (168 Hours)
    67
    FLASH - NAND (SLC)
    2.7V~3.6V
    BOTTOM
    1
    3.3V
    0.8mm
    R-PBGA-B67
    3.6V
    2.7V
    8Gb 1G x 8
    Non-Volatile
    ASYNCHRONOUS
    FLASH
    Parallel
    1GX8
    8
    25ns
    8589934592 bit
    3V
    1mm
    8mm
    6.5mm
    RoHS Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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