Toshiba Semiconductor and Storage TH58BVG3S0HTA00
- Part Number:
- TH58BVG3S0HTA00
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3229691-TH58BVG3S0HTA00
- Description:
- IC EEPROM 4GBIT 25NS 48TSOP
- Datasheet:
- TH58BVG3S0HTA00
Toshiba Semiconductor and Storage TH58BVG3S0HTA00 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58BVG3S0HTA00.
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature0°C~70°C TA
- PackagingTray
- SeriesBenand™
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- TechnologyFLASH - NAND (SLC)
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.5mm
- JESD-30 CodeR-PDSO-G48
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size8Gb 1G x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization1GX8
- Memory Width8
- Write Cycle Time - Word, Page25ns
- Memory Density8589934592 bit
- Programming Voltage3.3V
- Height Seated (Max)1.2mm
- Length18.4mm
- Width12mm
- RoHS StatusRoHS Compliant
TH58BVG3S0HTA00 Overview
The Benand™ series is a surface mount product with an operating temperature range of 0°C to 70°C TA. It has a moisture sensitivity level of 3 (168 hours) and 48 terminations. The voltage supply for this product is 2.7V to 3.6V and the terminal pitch is 0.5mm. It follows the JESD-30 code of R-PDSO-G48 and has a programming voltage of 3.3V. The length of this product is 18.4mm.
TH58BVG3S0HTA00 Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
TH58BVG3S0HTA00 Applications
There are a lot of Kioxia America, Inc.
TH58BVG3S0HTA00 Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
The Benand™ series is a surface mount product with an operating temperature range of 0°C to 70°C TA. It has a moisture sensitivity level of 3 (168 hours) and 48 terminations. The voltage supply for this product is 2.7V to 3.6V and the terminal pitch is 0.5mm. It follows the JESD-30 code of R-PDSO-G48 and has a programming voltage of 3.3V. The length of this product is 18.4mm.
TH58BVG3S0HTA00 Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
TH58BVG3S0HTA00 Applications
There are a lot of Kioxia America, Inc.
TH58BVG3S0HTA00 Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
TH58BVG3S0HTA00 More Descriptions
Active GULL WING 2013 Parallel (Memory Format) Memory 70C 2.7V 8589934592bit 12mm
8G(4G x 2)bit, generation: 24nm, ECC logic on the chip, VCC=2.7 to 3.6V
NAND Flash Serial 3.3V 8G-bit 1G x 8 48-Pin TSOP-I
IC FLASH 8GBIT PARALLEL 48TSOP I
EEPROM 8 Gbit CMOS NAND EEPROM
8G(4G x 2)bit, generation: 24nm, ECC logic on the chip, VCC=2.7 to 3.6V
NAND Flash Serial 3.3V 8G-bit 1G x 8 48-Pin TSOP-I
IC FLASH 8GBIT PARALLEL 48TSOP I
EEPROM 8 Gbit CMOS NAND EEPROM
The three parts on the right have similar specifications to TH58BVG3S0HTA00.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusView Compare
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TH58BVG3S0HTA00Surface Mount48-TFSOP (0.724, 18.40mm Width)YES0°C~70°C TATrayBenand™Active3 (168 Hours)48FLASH - NAND (SLC)2.7V~3.6VDUAL13.3V0.5mmR-PDSO-G483.6V2.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASHParallel1GX8825ns8589934592 bit3.3V1.2mm18.4mm12mmRoHS Compliant-
-
Surface Mount63-VFBGAYES-40°C~85°C TATray-Active3 (168 Hours)63FLASH - NAND (SLC)2.7V~3.6VBOTTOM13.3V0.8mmR-PBGA-B633.6V2.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASHParallel1GX8825ns8589934592 bit3.3V1mm11mm9mmRoHS Compliant
-
Surface Mount63-BGA--40°C~85°C TATray-Active3 (168 Hours)-FLASH - NAND (SLC)1.7V~1.95V-------4Gb 512M x 8Non-Volatile-FLASHParallel--25ns-----RoHS Compliant
-
Surface Mount67-VFBGAYES-40°C~85°C TATray-Active3 (168 Hours)67FLASH - NAND (SLC)2.7V~3.6VBOTTOM13.3V0.8mmR-PBGA-B673.6V2.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASHParallel1GX8825ns8589934592 bit3V1mm8mm6.5mmRoHS Compliant
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