Rohm Semiconductor 2SD2675TL
- Part Number:
- 2SD2675TL
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3585270-2SD2675TL
- Description:
- TRANS NPN 30V 1A TSMT3
- Datasheet:
- 2SD2675TL
Rohm Semiconductor 2SD2675TL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD2675TL.
- Factory Lead Time20 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-96
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SD2675
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product320MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce270 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic350mV @ 25mA, 500mA
- Collector Emitter Breakdown Voltage30V
- Max Frequency100MHz
- Transition Frequency320MHz
- Collector Emitter Saturation Voltage120mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)6V
- hFE Min270
- Continuous Collector Current1A
- Height950μm
- Length3mm
- Width1.8mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SD2675TL Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 120mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 25mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 320MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SD2675TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 320MHz
2SD2675TL Applications
There are a lot of ROHM Semiconductor
2SD2675TL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 120mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 25mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 320MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SD2675TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 320MHz
2SD2675TL Applications
There are a lot of ROHM Semiconductor
2SD2675TL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD2675TL More Descriptions
ROHM 2SD2675TL NPN Bipolar Transistor, 1 A, 30 V, 3-Pin SC-96 | ROHM Semiconductor 2SD2675TL
Trans GP BJT NPN 30V 1A 3-Pin TSMT T/R
TRANSISTOR, NPN, 30V, 1A, SC-96; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 320MHz; Power Dissipation Pd: 500mW; DC Collector Current: 1A; DC Current Gain hFE: 270hFE; Transisto
Transistor, Npn, 30V, 1A, Tsmt3; Transistor Polarity:Npn; Collector Emitter Voltage Max:30V; Continuous Collector Current:1A; Power Dissipation:500Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:320Mhz Rohs Compliant: Yes |Rohm 2SD2675TL
Trans GP BJT NPN 30V 1A 3-Pin TSMT T/R
TRANSISTOR, NPN, 30V, 1A, SC-96; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 320MHz; Power Dissipation Pd: 500mW; DC Collector Current: 1A; DC Current Gain hFE: 270hFE; Transisto
Transistor, Npn, 30V, 1A, Tsmt3; Transistor Polarity:Npn; Collector Emitter Voltage Max:30V; Continuous Collector Current:1A; Power Dissipation:500Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:320Mhz Rohs Compliant: Yes |Rohm 2SD2675TL
The three parts on the right have similar specifications to 2SD2675TL.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeTerminal FinishReach Compliance CodeJESD-30 CodeConfigurationCase ConnectionJEDEC-95 CodeFrequency - TransitionSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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2SD2675TL20 WeeksCopper, Silver, TinSurface MountSurface MountSC-963SILICON150°C TJTape & Reel (TR)2003e1yesActive1 (Unlimited)3EAR998541.21.00.75Other Transistors30V500mWDUALGULL WING2601A102SD26753Not Qualified1SingleAMPLIFIER320MHzNPNNPN30V1A270 @ 100mA 2V100nA ICBO350mV @ 25mA, 500mA30V100MHz320MHz120mV30V30V6V2701A950μm3mm1.8mmNo SVHCROHS3 CompliantLead Free------------
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--Through HoleThrough HoleTO-220-3 Full Pack-SILICON150°C TJBulk2004e6noObsolete1 (Unlimited)3EAR998541.29.00.95-60V2WSINGLE-2605A10--Not Qualified1-AMPLIFIER-NPNNPN300mV5A500 @ 1A 4V100μA ICBO300mV @ 100mA, 4A60V-30MHz-60V--------RoHS Compliant-Tin/Bismuth (Sn/Bi)unknownR-PSFM-T3SINGLEISOLATEDTO-220AB30MHz----
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--Through HoleThrough Hole3-SIP3-150°C TJTape & Box (TB)2003--Obsolete1 (Unlimited)----80V2W---3A-2SD2137-------NPN1.2V3A120 @ 1A 4V100μA1.2V @ 375mA, 3A80V---80V--------RoHS CompliantContains Lead------30MHzMT-4-A12W80V3A
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--Surface MountSurface MountSC-89, SOT-490--125°C TJTape & Reel (TR)2003--Obsolete1 (Unlimited)----50V125mW---100mA-2SD2216-------NPN300mV100mA180 @ 2mA 10V100μA300mV @ 10mA, 100mA50V---50V--------RoHS CompliantContains Lead------150MHzSSMini3-F1125mW50V100mA
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