Rohm Semiconductor 2SD2396K
- Part Number:
- 2SD2396K
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3069187-2SD2396K
- Description:
- TRANS NPN 60V 3A TO220
- Datasheet:
- 2SD2396
Rohm Semiconductor 2SD2396K technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD2396K.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- HTS Code8541.29.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation2W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating3A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionISOLATED
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)800mV
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 500mA 4V
- Current - Collector Cutoff (Max)100μA ICBO
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic800mV @ 50mA, 2A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency40MHz
- Frequency - Transition40MHz
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SD2396K Overview
This device has a DC current gain of 1000 @ 500mA 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 40MHz.The maximum collector current is 3A volts.
2SD2396K Features
the DC current gain for this device is 1000 @ 500mA 4V
the vce saturation(Max) is 800mV @ 50mA, 2A
the current rating of this device is 3A
a transition frequency of 40MHz
2SD2396K Applications
There are a lot of ROHM Semiconductor
2SD2396K applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 1000 @ 500mA 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 40MHz.The maximum collector current is 3A volts.
2SD2396K Features
the DC current gain for this device is 1000 @ 500mA 4V
the vce saturation(Max) is 800mV @ 50mA, 2A
the current rating of this device is 3A
a transition frequency of 40MHz
2SD2396K Applications
There are a lot of ROHM Semiconductor
2SD2396K applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD2396K More Descriptions
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS NPN 60V 3A TO220
OEMs, CMs ONLY (NO BROKERS)
TRANS NPN 60V 3A TO220
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to 2SD2396K.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionRoHS StatusLead FreeNumber of PinsSupplier Device PackageBase Part NumberPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageView Compare
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2SD2396KThrough HoleThrough HoleTO-220-3 Full PackSILICON150°C TJBulk2004Obsolete1 (Unlimited)3EAR998541.29.00.75Other Transistors60V2WSINGLENOT SPECIFIED3ANOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLEISOLATEDAMPLIFIERNPNNPN800mV3A1000 @ 500mA 4V100μA ICBOTO-220AB800mV @ 50mA, 2A60V40MHz40MHzROHS3 CompliantLead Free--------
-
Through HoleThrough Hole3-SIP-150°C TJTape & Box (TB)2003Obsolete1 (Unlimited)----80V2W--3A---------NPN1.2V3A120 @ 1A 4V100μA-1.2V @ 375mA, 3A80V-30MHzRoHS CompliantContains Lead3MT-4-A12SD21372W80V3A80V
-
Surface MountSurface MountSC-89, SOT-490-125°C TJTape & Reel (TR)2003Obsolete1 (Unlimited)----50V125mW--100mA---------NPN300mV100mA180 @ 2mA 10V100μA-300mV @ 10mA, 100mA50V-150MHzRoHS CompliantContains Lead-SSMini3-F12SD2216125mW50V100mA50V
-
Through HoleThrough HoleTO-220-3 Full Pack-150°C TJBulk2003Obsolete1 (Unlimited)----60V2W--4A---------NPN1.5V4A120 @ 1A 4V100μA ICBO-1.5V @ 400mA, 4A60V-80MHzRoHS CompliantLead Free-TO-220F-A1-2W60V4A60V
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