Rohm Semiconductor 2SD2211T100R
- Part Number:
- 2SD2211T100R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3585376-2SD2211T100R
- Description:
- TRANS NPN 160V 1.5A SOT89
- ECAD Model:
-
- Datasheet:
- 2SD1857A, 2SD1918, 2SD2211
Rohm Semiconductor 2SD2211T100R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD2211T100R.
- Contact PlatingCopper, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published1999
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN COPPER
- SubcategoryOther Transistors
- Voltage - Rated DC160V
- Max Power Dissipation2W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating1.5A
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product80MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA 5V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic2V @ 100mA, 1A
- Collector Emitter Breakdown Voltage160V
- Transition Frequency80MHz
- Collector Base Voltage (VCBO)160V
- Emitter Base Voltage (VEBO)5V
- hFE Min180
- Continuous Collector Current1.5A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SD2211T100R Overview
This device has a DC current gain of 180 @ 100mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1.5A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.5A.In this part, there is a transition frequency of 80MHz.The maximum collector current is 1.5A volts.
2SD2211T100R Features
the DC current gain for this device is 180 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SD2211T100R Applications
There are a lot of ROHM Semiconductor
2SD2211T100R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 180 @ 100mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1.5A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.5A.In this part, there is a transition frequency of 80MHz.The maximum collector current is 1.5A volts.
2SD2211T100R Features
the DC current gain for this device is 180 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SD2211T100R Applications
There are a lot of ROHM Semiconductor
2SD2211T100R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to 2SD2211T100R.
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ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsElement ConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRadiation HardeningRoHS StatusLead FreeHTS CodeTerminal PositionReach Compliance CodeQualification StatusConfigurationJEDEC-95 CodeMax Breakdown VoltageFrequency - TransitionSupplier Device PackageBase Part NumberPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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2SD2211T100RCopper, TinSurface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)1999e2yesNot For New Designs1 (Unlimited)3EAR99TIN COPPEROther Transistors160V2WFLAT2601.5A103R-PSSO-F31SingleCOLLECTORSWITCHING80MHzNPNNPN160V1.5A180 @ 100mA 5V1μA ICBO2V @ 100mA, 1A160V80MHz160V5V1801.5ANoROHS3 CompliantLead Free-------------- -
-Through HoleThrough HoleTO-220-3 Full Pack-SILICON150°C TJBulk2004e6noObsolete1 (Unlimited)3EAR99Tin/Bismuth (Sn/Bi)-60V2W-2605A10-R-PSFM-T31-ISOLATEDAMPLIFIER-NPNNPN300mV5A500 @ 1A 4V100μA ICBO300mV @ 100mA, 4A60V30MHz-----RoHS Compliant-8541.29.00.95SINGLEunknownNot QualifiedSINGLETO-220AB60V30MHz-----
-
-Through HoleThrough Hole3-SIP3-150°C TJTape & Box (TB)2003--Obsolete1 (Unlimited)----80V2W--3A---------NPN1.2V3A120 @ 1A 4V100μA1.2V @ 375mA, 3A80V------RoHS CompliantContains Lead------80V30MHzMT-4-A12SD21372W80V3A
-
-Surface MountSurface MountSC-89, SOT-490--125°C TJTape & Reel (TR)2003--Obsolete1 (Unlimited)----50V125mW--100mA---------NPN300mV100mA180 @ 2mA 10V100μA300mV @ 10mA, 100mA50V------RoHS CompliantContains Lead------50V150MHzSSMini3-F12SD2216125mW50V100mA
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