Rohm Semiconductor 2SD2195T100
- Part Number:
- 2SD2195T100
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2466637-2SD2195T100
- Description:
- TRANS NPN DARL 100V 2A SOT-89
- Datasheet:
- 2SD2195, 1980, 1867
Rohm Semiconductor 2SD2195T100 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD2195T100.
- Factory Lead Time7 Weeks
- Contact PlatingCopper, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTIN COPPER
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation2W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating2A
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SD2195
- Pin Count3
- Number of Elements2
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation500mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A 2V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency80MHz
- Max Breakdown Voltage100V
- Frequency - Transition80MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)6V
- hFE Min1000
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SD2195T100 Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.In this part, there is a transition frequency of 80MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 2A volts.
2SD2195T100 Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD2195T100 Applications
There are a lot of ROHM Semiconductor
2SD2195T100 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.In this part, there is a transition frequency of 80MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 2A volts.
2SD2195T100 Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD2195T100 Applications
There are a lot of ROHM Semiconductor
2SD2195T100 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD2195T100 More Descriptions
Trans Darlington NPN 100V 2A 4-Pin(3 Tab) MPT T/R
French Electronic Distributor since 1988
TRANSISTOR SOT-89;BCE NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:1000; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:80MHz; Hfe Min:1000; Package / Case:SOT-89; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Power
French Electronic Distributor since 1988
TRANSISTOR SOT-89;BCE NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:1000; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:80MHz; Hfe Min:1000; Package / Case:SOT-89; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Power
The three parts on the right have similar specifications to 2SD2195T100.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Terminal PositionReach Compliance CodeJESD-30 CodeQualification StatusConfigurationPolarity/Channel TypeJEDEC-95 CodeView Compare
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2SD2195T1007 WeeksCopper, TinSurface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)2005e2yesNot For New Designs1 (Unlimited)3SMD/SMTEAR99TIN COPPER8541.21.00.95Other Transistors100V2WFLAT2602A102SD219532NPNSingle500mWCOLLECTORAMPLIFIERNPN - Darlington100V2A1000 @ 1A 2V10μA ICBO1.5V @ 1mA, 1A100V80MHz100V80MHz100V6V1000No SVHCNoROHS3 CompliantLead Free------------
-
--Surface MountSurface MountTO-243AA--150°C TJTape & Reel (TR)2002--Obsolete1 (Unlimited)------150V1W--1A-2SD2459-------NPN300mV1A120 @ 100mA 2V100nA ICBO300mV @ 25mA, 500mA150V-150V90MHz-----RoHS CompliantContains LeadMiniP3-F11W150V1A-------
-
--Through HoleThrough HoleTO-220-3 Full Pack-SILICON150°C TJBulk2004e6noObsolete1 (Unlimited)3-EAR99Tin/Bismuth (Sn/Bi)8541.29.00.95-60V2W-2605A10--1---ISOLATEDAMPLIFIERNPN300mV5A500 @ 1A 4V100μA ICBO300mV @ 100mA, 4A60V30MHz60V30MHz-----RoHS Compliant-----SINGLEunknownR-PSFM-T3Not QualifiedSINGLENPNTO-220AB
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--Through HoleThrough HoleTO-220-3 Full Pack--150°C TJBulk2003--Obsolete1 (Unlimited)------60V2W--4A---------NPN1.5V4A120 @ 1A 4V100μA ICBO1.5V @ 400mA, 4A60V-60V80MHz-----RoHS CompliantLead FreeTO-220F-A12W60V4A-------
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