Rohm Semiconductor 2SD2143TL
- Part Number:
- 2SD2143TL
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2845332-2SD2143TL
- Description:
- TRANS NPN DARL 60V 2A SOT-428
- Datasheet:
- 2SD2212, 2SD2143, 2SD1866
Rohm Semiconductor 2SD2143TL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD2143TL.
- Factory Lead Time20 Weeks
- Contact PlatingCopper, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Copper (Sn98Cu2)
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 0.0857
- HTS Code8541.29.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation10W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating2A
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SD2143
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)70V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A 2V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency80MHz
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)70V
- Emitter Base Voltage (VEBO)6V
- hFE Min1000
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SD2143TL Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.In this part, there is a transition frequency of 80MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 2A volts.
2SD2143TL Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD2143TL Applications
There are a lot of ROHM Semiconductor
2SD2143TL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.In this part, there is a transition frequency of 80MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 2A volts.
2SD2143TL Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD2143TL Applications
There are a lot of ROHM Semiconductor
2SD2143TL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD2143TL More Descriptions
Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon
2SD2143 Series 60 V 2 A SMT NPN Medium Power Transistor - SC-63
Trans Darlington NPN 70V 2A 1000mW 3-Pin(2 Tab) CPT T/R / TRANS NPN DARL 60V 2A SOT-428
TRANS, NPN, 60V, 2A, 150DEG C, 10W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 80MHz; Power Dissipation Pd: 10W; DC Collector Current: 2A; DC Current Gain hFE: 1000hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
2SD2143 Series 60 V 2 A SMT NPN Medium Power Transistor - SC-63
Trans Darlington NPN 70V 2A 1000mW 3-Pin(2 Tab) CPT T/R / TRANS NPN DARL 60V 2A SOT-428
TRANS, NPN, 60V, 2A, 150DEG C, 10W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 80MHz; Power Dissipation Pd: 10W; DC Collector Current: 2A; DC Current Gain hFE: 1000hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to 2SD2143TL.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPolarityElement ConfigurationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreePower DissipationGain Bandwidth ProductContinuous Collector CurrentTerminal PositionReach Compliance CodeQualification StatusConfigurationPolarity/Channel TypeJEDEC-95 CodeFrequency - TransitionSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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2SD2143TL20 WeeksCopper, TinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON150°C TJTape & Reel (TR)2011e2yesActive1 (Unlimited)2EAR99Tin/Copper (Sn98Cu2)BUILT IN BIAS RESISTANCE RATIO IS 0.08578541.29.00.75Other Transistors60V10WGULL WING2602A102SD21433R-PSSO-G21NPNSingleCOLLECTORSWITCHINGNPN - Darlington70V2A1000 @ 1A 2V1μA ICBO1.5V @ 1mA, 1A60V80MHz60V70V6V1000NoROHS3 CompliantLead Free---------------
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-Copper, TinSurface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)2001e2yesObsolete1 (Unlimited)3EAR99TIN COPPERBUILT-IN BIAS RESISTOR-Other Transistors90V2WFLAT2602A102SD21703R-PSSO-F31NPNSingleCOLLECTORSWITCHINGNPN - Darlington110V2A1000 @ 1A 2V10μA ICBO1.5V @ 1mA, 1A90V80MHz90V110V6V1000NoROHS3 CompliantLead Free500mW80MHz2A-----------
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--Through HoleThrough HoleTO-220-3 Full Pack-SILICON150°C TJBulk2004e6noObsolete1 (Unlimited)3EAR99Tin/Bismuth (Sn/Bi)-8541.29.00.95-60V2W-2605A10--R-PSFM-T31--ISOLATEDAMPLIFIERNPN300mV5A500 @ 1A 4V100μA ICBO300mV @ 100mA, 4A60V30MHz60V----RoHS Compliant----SINGLEunknownNot QualifiedSINGLENPNTO-220AB30MHz----
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--Through HoleThrough HoleTO-220-3 Full Pack--150°C TJBulk2003--Obsolete1 (Unlimited)------60V2W--4A---------NPN1.5V4A120 @ 1A 4V100μA ICBO1.5V @ 400mA, 4A60V-60V----RoHS CompliantLead Free---------80MHzTO-220F-A12W60V4A
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