2SD2142KT146

Rohm Semiconductor 2SD2142KT146

Part Number:
2SD2142KT146
Manufacturer:
Rohm Semiconductor
Ventron No:
2845553-2SD2142KT146
Description:
TRANS NPN DARL 30V 0.3A SOT23-3
ECAD Model:
Datasheet:
2SD2142KT146

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Specifications
Rohm Semiconductor 2SD2142KT146 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD2142KT146.
  • Factory Lead Time
    13 Weeks
  • Contact Plating
    Copper, Silver, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    32V
  • Max Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    300mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    2SD2142
  • Pin Count
    3
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    200mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    200MHz
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    300mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10000 @ 100mA 5V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 100μA, 100mA
  • Collector Emitter Breakdown Voltage
    30V
  • Transition Frequency
    200MHz
  • Max Breakdown Voltage
    30V
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    10V
  • hFE Min
    5000
  • Continuous Collector Current
    300mA
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2SD2142KT146 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 300mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 300mA volts at its maximum.

2SD2142KT146 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 200MHz


2SD2142KT146 Applications
There are a lot of ROHM Semiconductor
2SD2142KT146 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2SD2142KT146 More Descriptions
2SD2142K Series 30 V 0.3 A SMT NPN Darlington Amplifier Transistor - SOT-23
Trans Darlington NPN 30V 0.3A 200mW 3-Pin SMT T/R
TRANS,DARL,NPN,32V,0.3A,SOT-346; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:30V; Gain Bandwidth ft Typ:200MHz; Power Dissipation Pd:200mW; DC Collector Current:300mA; DC Current Gain hFE:10000; Transistor Case ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to 2SD2142KT146.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    JESD-30 Code
    Case Connection
    Polarity/Channel Type
    View Compare
  • 2SD2142KT146
    2SD2142KT146
    13 Weeks
    Copper, Silver, Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2008
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    8541.21.00.75
    Other Transistors
    32V
    200mW
    DUAL
    GULL WING
    260
    300mA
    10
    2SD2142
    3
    1
    NPN
    Single
    200mW
    AMPLIFIER
    200MHz
    NPN - Darlington
    30V
    300mA
    10000 @ 100mA 5V
    100nA ICBO
    1.5V @ 100μA, 100mA
    30V
    200MHz
    30V
    30V
    10V
    5000
    300mA
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2SD20640S
    -
    -
    Through Hole
    Through Hole
    TOP-3F
    -
    -
    150°C TJ
    Bulk
    2003
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    120V
    3W
    -
    -
    -
    6A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    2V
    6A
    80 @ 1A 5V
    50μA ICBO
    2V @ 400mA, 4A
    120V
    -
    120V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    TOP-3F-A1
    3W
    120V
    6A
    20MHz
    -
    -
    -
  • 2SD2211T100Q
    -
    Copper, Tin
    Surface Mount
    Surface Mount
    TO-243AA
    4
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1999
    e2
    yes
    Not For New Designs
    1 (Unlimited)
    3
    -
    TIN COPPER
    -
    Other Transistors
    160V
    2W
    -
    FLAT
    260
    1.5A
    10
    -
    3
    1
    -
    Single
    -
    SWITCHING
    80MHz
    NPN
    160V
    1.5A
    120 @ 100mA 5V
    1μA ICBO
    2V @ 100mA, 1A
    160V
    -
    -
    160V
    5V
    120
    1.5A
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    R-PSSO-F3
    COLLECTOR
    NPN
  • 2SD2137APA
    -
    -
    Through Hole
    Through Hole
    3-SIP
    3
    -
    150°C TJ
    Tape & Box (TB)
    2003
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    80V
    2W
    -
    -
    -
    3A
    -
    2SD2137
    -
    -
    -
    -
    -
    -
    -
    NPN
    1.2V
    3A
    120 @ 1A 4V
    100μA
    1.2V @ 375mA, 3A
    80V
    -
    80V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Contains Lead
    MT-4-A1
    2W
    80V
    3A
    30MHz
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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