Rohm Semiconductor 2SD2142KT146
- Part Number:
- 2SD2142KT146
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2845553-2SD2142KT146
- Description:
- TRANS NPN DARL 30V 0.3A SOT23-3
- Datasheet:
- 2SD2142KT146
Rohm Semiconductor 2SD2142KT146 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD2142KT146.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC32V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating300mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SD2142
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product200MHz
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency200MHz
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- hFE Min5000
- Continuous Collector Current300mA
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SD2142KT146 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 300mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 300mA volts at its maximum.
2SD2142KT146 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 200MHz
2SD2142KT146 Applications
There are a lot of ROHM Semiconductor
2SD2142KT146 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 300mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 300mA volts at its maximum.
2SD2142KT146 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 200MHz
2SD2142KT146 Applications
There are a lot of ROHM Semiconductor
2SD2142KT146 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD2142KT146 More Descriptions
2SD2142K Series 30 V 0.3 A SMT NPN Darlington Amplifier Transistor - SOT-23
Trans Darlington NPN 30V 0.3A 200mW 3-Pin SMT T/R
TRANS,DARL,NPN,32V,0.3A,SOT-346; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:30V; Gain Bandwidth ft Typ:200MHz; Power Dissipation Pd:200mW; DC Collector Current:300mA; DC Current Gain hFE:10000; Transistor Case ;RoHS Compliant: Yes
Trans Darlington NPN 30V 0.3A 200mW 3-Pin SMT T/R
TRANS,DARL,NPN,32V,0.3A,SOT-346; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:30V; Gain Bandwidth ft Typ:200MHz; Power Dissipation Pd:200mW; DC Collector Current:300mA; DC Current Gain hFE:10000; Transistor Case ;RoHS Compliant: Yes
The three parts on the right have similar specifications to 2SD2142KT146.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionJESD-30 CodeCase ConnectionPolarity/Channel TypeView Compare
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2SD2142KT14613 WeeksCopper, Silver, TinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)2008e1yesActive1 (Unlimited)3EAR99TIN SILVER COPPER8541.21.00.75Other Transistors32V200mWDUALGULL WING260300mA102SD214231NPNSingle200mWAMPLIFIER200MHzNPN - Darlington30V300mA10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V200MHz30V30V10V5000300mANo SVHCNoROHS3 CompliantLead Free---------
-
--Through HoleThrough HoleTOP-3F--150°C TJBulk2003--Obsolete1 (Unlimited)-----120V3W---6A---------NPN2V6A80 @ 1A 5V50μA ICBO2V @ 400mA, 4A120V-120V------RoHS CompliantLead FreeTOP-3F-A13W120V6A20MHz---
-
-Copper, TinSurface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)1999e2yesNot For New Designs1 (Unlimited)3-TIN COPPER-Other Transistors160V2W-FLAT2601.5A10-31-Single-SWITCHING80MHzNPN160V1.5A120 @ 100mA 5V1μA ICBO2V @ 100mA, 1A160V--160V5V1201.5A-NoROHS3 CompliantLead Free-----R-PSSO-F3COLLECTORNPN
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--Through HoleThrough Hole3-SIP3-150°C TJTape & Box (TB)2003--Obsolete1 (Unlimited)-----80V2W---3A-2SD2137-------NPN1.2V3A120 @ 1A 4V100μA1.2V @ 375mA, 3A80V-80V------RoHS CompliantContains LeadMT-4-A12W80V3A30MHz---
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