Rohm Semiconductor 2SD1898T100R

2SD1898T100R Overview
DC current gain in this device equals 180 @ 500mA 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.

2SD1898T100R Features
the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz


2SD1898T100R Applications
There are a lot of ROHM Semiconductor
2SD1898T100R applications of single BJT transistors.


Inverter
Interface
Driver
Muting