Rohm Semiconductor 2SD1863TV2R
- Part Number:
- 2SD1863TV2R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2466957-2SD1863TV2R
- Description:
- TRANS NPN 80V 1A ATV
- Datasheet:
- 2SD1898,1733,1768S,1863
Rohm Semiconductor 2SD1863TV2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD1863TV2R.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case3-SIP
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- Published2004
- PackagingTape & Box (TB)
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation1W
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SD1863
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400mV
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 500mA 3V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 20mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency100MHz
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min180
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SD1863TV2R Overview
In this device, the DC current gain is 180 @ 500mA 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SD1863TV2R Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1863TV2R Applications
There are a lot of ROHM Semiconductor
2SD1863TV2R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 180 @ 500mA 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SD1863TV2R Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1863TV2R Applications
There are a lot of ROHM Semiconductor
2SD1863TV2R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD1863TV2R More Descriptions
Trans GP BJT NPN 80V 1A 3-Pin ATV
French Electronic Distributor since 1988
French Electronic Distributor since 1988
The three parts on the right have similar specifications to 2SD1863TV2R.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePublishedPackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionTransistor ApplicationHTS CodeView Compare
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2SD1863TV2RThrough HoleThrough Hole3-SIPSILICON150°C TJ2004Tape & Box (TB)e1yesObsolete1 (Unlimited)3EAR99TIN SILVER COPPEROther Transistors80V1W2601A102SD18633R-PSIP-T3Not Qualified1Single100MHzNPNNPN400mV1A180 @ 500mA 3V1μA ICBO400mV @ 20mA, 500mA80V100MHz80V100V5V180ROHS3 CompliantLead Free--------
-
-Through HoleTO-251-3 Short Leads, IPak, TO-251AA-150°C TJ-Bulk--Obsolete1 (Unlimited)-----------------NPN--200 @ 500mA 5V1μA ICBO400mV @ 200mA, 2A------ROHS3 Compliant-TP1W100V4A180MHz--
-
Through HoleThrough Hole3-SIPSILICON150°C TJ1998Tape & Box (TB)e1-Obsolete1 (Unlimited)3EAR99TIN SILVER COPPEROther Transistors32V1W2601A10-3R-PSIP-T3Not Qualified1Single150MHzNPNNPN400mV1A82 @ 100mA 3V500nA ICBO400mV @ 50mA, 500mA32V150MHz-40V5V120ROHS3 CompliantLead Free-----SWITCHING-
-
Through HoleThrough Hole3-SIPSILICON150°C TJ2006Tape & Box (TB)e1-Obsolete1 (Unlimited)3EAR99TIN SILVER COPPEROther Transistors120V1W2601.5A102SD18573R-PSIP-T3Not Qualified1Single80MHzNPNNPN2V2A82 @ 100mA 5V1μA ICBO2V @ 100mA, 1A120V80MHz-120V5V82ROHS3 CompliantLead Free---2A-SWITCHING8541.29.00.75
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