2SD1863TV2R

Rohm Semiconductor 2SD1863TV2R

Part Number:
2SD1863TV2R
Manufacturer:
Rohm Semiconductor
Ventron No:
2466957-2SD1863TV2R
Description:
TRANS NPN 80V 1A ATV
ECAD Model:
Datasheet:
2SD1898,1733,1768S,1863

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Specifications
Rohm Semiconductor 2SD1863TV2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD1863TV2R.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    3-SIP
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Published
    2004
  • Packaging
    Tape & Box (TB)
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    80V
  • Max Power Dissipation
    1W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1A
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    2SD1863
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    400mV
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    180 @ 500mA 3V
  • Current - Collector Cutoff (Max)
    1μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 20mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    100MHz
  • Max Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    180
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2SD1863TV2R Overview
In this device, the DC current gain is 180 @ 500mA 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

2SD1863TV2R Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz


2SD1863TV2R Applications
There are a lot of ROHM Semiconductor
2SD1863TV2R applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2SD1863TV2R More Descriptions
Trans GP BJT NPN 80V 1A 3-Pin ATV
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to 2SD1863TV2R.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Published
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    RoHS Status
    Lead Free
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Transistor Application
    HTS Code
    View Compare
  • 2SD1863TV2R
    2SD1863TV2R
    Through Hole
    Through Hole
    3-SIP
    SILICON
    150°C TJ
    2004
    Tape & Box (TB)
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    Other Transistors
    80V
    1W
    260
    1A
    10
    2SD1863
    3
    R-PSIP-T3
    Not Qualified
    1
    Single
    100MHz
    NPN
    NPN
    400mV
    1A
    180 @ 500mA 3V
    1μA ICBO
    400mV @ 20mA, 500mA
    80V
    100MHz
    80V
    100V
    5V
    180
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • 2SD1816T-H
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    150°C TJ
    -
    Bulk
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    -
    -
    200 @ 500mA 5V
    1μA ICBO
    400mV @ 200mA, 2A
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    TP
    1W
    100V
    4A
    180MHz
    -
    -
  • 2SD1858TV2P
    Through Hole
    Through Hole
    3-SIP
    SILICON
    150°C TJ
    1998
    Tape & Box (TB)
    e1
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    Other Transistors
    32V
    1W
    260
    1A
    10
    -
    3
    R-PSIP-T3
    Not Qualified
    1
    Single
    150MHz
    NPN
    NPN
    400mV
    1A
    82 @ 100mA 3V
    500nA ICBO
    400mV @ 50mA, 500mA
    32V
    150MHz
    -
    40V
    5V
    120
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    SWITCHING
    -
  • 2SD1857TV2P
    Through Hole
    Through Hole
    3-SIP
    SILICON
    150°C TJ
    2006
    Tape & Box (TB)
    e1
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    Other Transistors
    120V
    1W
    260
    1.5A
    10
    2SD1857
    3
    R-PSIP-T3
    Not Qualified
    1
    Single
    80MHz
    NPN
    NPN
    2V
    2A
    82 @ 100mA 5V
    1μA ICBO
    2V @ 100mA, 1A
    120V
    80MHz
    -
    120V
    5V
    82
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    2A
    -
    SWITCHING
    8541.29.00.75
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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