Rohm Semiconductor 2SD1766T100Q
- Part Number:
- 2SD1766T100Q
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2467125-2SD1766T100Q
- Description:
- TRANS NPN 32V 2A SOT-89
- ECAD Model:
-
- Datasheet:
- 2SD1766, 2SD1758, 2SD1862
Rohm Semiconductor 2SD1766T100Q technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SD1766T100Q.
- Contact PlatingCopper, Tin
- Package / CaseTO-243AA
- Mounting TypeSurface Mount
- MountSurface Mount
- Number of Pins4
- Transistor Element MaterialSILICON
- Published2009
- PackagingTape & Reel (TR)
- Operating Temperature150°C TJ
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN COPPER
- SubcategoryOther Transistors
- Voltage - Rated DC32V
- Max Power Dissipation2W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating2A
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SD1766
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)32V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA 3V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic800mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage32V
- Transition Frequency100MHz
- Max Breakdown Voltage32V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min120
- VCEsat-Max0.8 V
- RoHS StatusROHS3 Compliant
- Radiation HardeningNo
- Lead FreeLead Free
2SD1766T100Q Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 2A volts is possible.
2SD1766T100Q Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
2SD1766T100Q Applications
There are a lot of ROHM Semiconductor
2SD1766T100Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 2A volts is possible.
2SD1766T100Q Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
2SD1766T100Q Applications
There are a lot of ROHM Semiconductor
2SD1766T100Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD1766T100Q More Descriptions
Trans GP BJT NPN 32V 2A 4-Pin(3 Tab) MPT T/R
TRANS NPN 32V 2A SOT-89
CAP CER 0.082UF 100V X7R 0805
TRANS NPN 32V 2A MPT3
OEMs, CMs ONLY (NO BROKERS)
TRANS NPN 32V 2A SOT-89
CAP CER 0.082UF 100V X7R 0805
TRANS NPN 32V 2A MPT3
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to 2SD1766T100Q.
-
ImagePart NumberManufacturerContact PlatingPackage / CaseMounting TypeMountNumber of PinsTransistor Element MaterialPublishedPackagingOperating TemperatureJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxRoHS StatusRadiation HardeningLead FreeECCN CodeHTS CodeQualification StatusCurrent - Collector (Ic) (Max)Lifecycle StatusFactory Lead TimePower - MaxFrequency - TransitionView Compare
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2SD1766T100QCopper, TinTO-243AASurface MountSurface Mount4SILICON2009Tape & Reel (TR)150°C TJe2yesNot For New Designs1 (Unlimited)3TIN COPPEROther Transistors32V2WFLAT2602A100MHz102SD17663R-PSSO-F31Single2WCOLLECTORSWITCHING100MHzNPNNPN32V2A120 @ 500mA 3V1μA ICBO800mV @ 200mA, 2A32V100MHz32V40V5V1200.8 VROHS3 CompliantNoLead Free--------- -
-3-SIPThrough HoleThrough Hole-SILICON2006Tape & Box (TB)150°C TJe1-Obsolete1 (Unlimited)3TIN SILVER COPPEROther Transistors120V1W-2601.5A-102SD18573R-PSIP-T31Single--SWITCHING80MHzNPNNPN2V2A180 @ 100mA 5V1μA ICBO2V @ 100mA, 1A120V80MHz-120V5V180-ROHS3 Compliant-Lead FreeEAR998541.29.00.75Not Qualified2A----
-
-3-SIPThrough HoleThrough Hole-SILICON1998Tape & Box (TB)150°C TJe1-Obsolete1 (Unlimited)3TIN SILVER COPPEROther Transistors32V1W-2601A-10-3R-PSIP-T31Single--SWITCHING150MHzNPNNPN400mV1A82 @ 100mA 3V500nA ICBO400mV @ 50mA, 500mA32V150MHz-40V5V120-ROHS3 Compliant-Lead FreeEAR99-Not Qualified-----
-
-TO-220-3Through HoleThrough Hole--2005Tube150°C TJ--Active1 (Unlimited)----1.75W---------------NPN300mV5A140 @ 1A 2V100μA ICBO300mV @ 300mA, 3A50V--60V6V--ROHS3 Compliant-Lead Free----ACTIVE (Last Updated: 3 days ago)9 Weeks1.75W30MHz
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