Panasonic Electronic Components 2SD16450R

Name: 2SD16450R
Brand: Panasonic Electronic Components
SKU: 3585279-2SD16450R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SD16450R

Manufacturer:: Panasonic Electronic Components

Ventron No:: 3585279-2SD16450R

Description:: TRANS NPN DARL 60V 1A TO-126

ECAD Model:

Datasheet:: 2SD1645 Datasheet

Specifications

Panasonic Electronic Components 2SD16450R technical specifications, attributes, parameters and parts with similar specifications to Panasonic Electronic Components 2SD16450R.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126B-A1
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
60V
Max Power Dissipation
5W
Current Rating
1A
Power - Max
5W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
1.8V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
8000 @ 1A 10V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1mA, 1A
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Max Breakdown Voltage
60V
Frequency - Transition
150MHz
RoHS Status
Non-RoHS Compliant

Description

2SD16450R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8000 @ 1A 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.8V @ 1mA, 1A.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.This product comes in a TO-126B-A1 device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

2SD16450R Features
the DC current gain for this device is 8000 @ 1A 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the current rating of this device is 1A
the supplier device package of TO-126B-A1

2SD16450R Applications
There are a lot of Panasonic Electronic Components
2SD16450R applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2SD16450R More Descriptions

TRANS NPN DARL 60V 1A TO-126
Contact for details

Product Comparison

The three parts on the right have similar specifications to 2SD16450R.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated DC

Max Power Dissipation

Current Rating

Power - Max

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Max Breakdown Voltage

Frequency - Transition

RoHS Status

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transition Frequency

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Lead Free

Lifecycle Status

Factory Lead Time

View Compare
2SD16450R

Panasonic Electronic Components

Through Hole

Through Hole

TO-225AA, TO-126-3

TO-126B-A1

150°C TJ

Bulk

2008

Obsolete

1 (Unlimited)

60V

5W

1A

5W

NPN - Darlington

1.8V

1A

8000 @ 1A 10V

1μA ICBO

1.8V @ 1mA, 1A

60V

60V

1A

60V

150MHz

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2SD1857TV2R

Rohm Semiconductor

Through Hole

Through Hole

3-SIP

-

150°C TJ

Tape & Box (TB)

2006

Obsolete

1 (Unlimited)

120V

1W

1.5A

-

NPN

2V

2A

180 @ 100mA 5V

1μA ICBO

2V @ 100mA, 1A

120V

-

2A

-

-

ROHS3 Compliant

SILICON

e1

3

EAR99

TIN SILVER COPPER

8541.29.00.75

Other Transistors

260

10

2SD1857

3

R-PSIP-T3

Not Qualified

1

Single

SWITCHING

80MHz

NPN

80MHz

120V

5V

180

Lead Free

-

-

2SD16450R vs 2SD1857TV2R
2SD1858TV2P

Rohm Semiconductor

Through Hole

Through Hole

3-SIP

-

150°C TJ

Tape & Box (TB)

1998

Obsolete

1 (Unlimited)

32V

1W

1A

-

NPN

400mV

1A

82 @ 100mA 3V

500nA ICBO

400mV @ 50mA, 500mA

32V

-

-

-

-

ROHS3 Compliant

SILICON

e1

3

EAR99

TIN SILVER COPPER

-

Other Transistors

260

10

-

3

R-PSIP-T3

Not Qualified

1

Single

SWITCHING

150MHz

NPN

150MHz

40V

5V

120

Lead Free

-

-

2SD16450R vs 2SD1858TV2P
2SD1060S-1E

ON Semiconductor

Through Hole

Through Hole

TO-220-3

-

150°C TJ

Tube

2005

Active

1 (Unlimited)

-

1.75W

-

1.75W

NPN

300mV

5A

140 @ 1A 2V

100μA ICBO

300mV @ 300mA, 3A

50V

-

-

-

30MHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

60V

6V

-

Lead Free

ACTIVE (Last Updated: 3 days ago)

9 Weeks

2SD16450R vs 2SD1060S-1E