ON Semiconductor 2SD1624T-TD-E

Name: 2SD1624T-TD-E
Brand: ON Semiconductor
SKU: 3068922-2SD1624T-TD-E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SD1624T-TD-E

Manufacturer:: ON Semiconductor

Ventron No:: 3068922-2SD1624T-TD-E

Description:: TRANS NPN 50V 3A PCP

ECAD Model:

Datasheet:: 2SD1624T-TD-E

Specifications

ON Semiconductor 2SD1624T-TD-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SD1624T-TD-E.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
5 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
500mW
Terminal Form
FLAT
Frequency
150MHz
Base Part Number
2SD1624
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
350mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2SD1624T-TD-E Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 350mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.

2SD1624T-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

2SD1624T-TD-E Applications
There are a lot of ON Semiconductor
2SD1624T-TD-E applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2SD1624T-TD-E More Descriptions

Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP
ON Semi 2SD1624T-TD-E NPN Bipolar Transistor; 3 A; 50 V; 3-Pin PCP
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans GP BJT NPN 50V 3A 4-Pin(3 Tab) PCP T/R - Tape and Reel
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, NPN, 50V, 3A, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:150MHz; Power Dissipation

Product Comparison

The three parts on the right have similar specifications to 2SD1624T-TD-E.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Power Dissipation

Terminal Form

Frequency

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

HTS Code

Subcategory

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Current - Collector (Ic) (Max)

View Compare
2SD1624T-TD-E

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

5 Weeks

Surface Mount

Surface Mount

TO-243AA

3

SILICON

150°C TJ

Tape & Reel (TR)

2012

e6

yes

Active

1 (Unlimited)

3

EAR99

Tin/Bismuth (Sn/Bi)

500mW

FLAT

150MHz

2SD1624

3

1

Single

500mW

COLLECTOR

SWITCHING

150MHz

NPN

NPN

50V

3A

200 @ 100mA 2V

1μA ICBO

500mV @ 100mA, 2A

50V

150MHz

350mV

50V

60V

6V

100

1.5mm

4.5mm

2.5mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
2SD1857TV2Q

Rohm Semiconductor

-

-

Through Hole

Through Hole

3-SIP

-

SILICON

150°C TJ

Tape & Box (TB)

2006

e1

-

Obsolete

1 (Unlimited)

3

EAR99

TIN SILVER COPPER

1W

-

-

2SD1857

3

1

Single

-

-

SWITCHING

80MHz

NPN

NPN

2V

2A

120 @ 100mA 5V

1μA ICBO

2V @ 100mA, 1A

120V

80MHz

-

-

120V

5V

120

-

-

-

-

ROHS3 Compliant

Lead Free

8541.29.00.75

Other Transistors

120V

260

1.5A

10

R-PSIP-T3

Not Qualified

2A

2SD1624T-TD-E vs 2SD1857TV2Q
2SD1858TV2P

Rohm Semiconductor

-

-

Through Hole

Through Hole

3-SIP

-

SILICON

150°C TJ

Tape & Box (TB)

1998

e1

-

Obsolete

1 (Unlimited)

3

EAR99

TIN SILVER COPPER

1W

-

-

-

3

1

Single

-

-

SWITCHING

150MHz

NPN

NPN

400mV

1A

82 @ 100mA 3V

500nA ICBO

400mV @ 50mA, 500mA

32V

150MHz

-

-

40V

5V

120

-

-

-

-

ROHS3 Compliant

Lead Free

-

Other Transistors

32V

260

1A

10

R-PSIP-T3

Not Qualified

-

2SD1624T-TD-E vs 2SD1858TV2P
2SD1857TV2P

Rohm Semiconductor

-

-

Through Hole

Through Hole

3-SIP

-

SILICON

150°C TJ

Tape & Box (TB)

2006

e1

-

Obsolete

1 (Unlimited)

3

EAR99

TIN SILVER COPPER

1W

-

-

2SD1857

3

1

Single

-

-

SWITCHING

80MHz

NPN

NPN

2V

2A

82 @ 100mA 5V

1μA ICBO

2V @ 100mA, 1A

120V

80MHz

-

-

120V

5V

82

-

-

-

-

ROHS3 Compliant

Lead Free

8541.29.00.75

Other Transistors

120V

260

1.5A

10

R-PSIP-T3

Not Qualified

2A

2SD1624T-TD-E vs 2SD1857TV2P