ON Semiconductor 2SD1207S
- Part Number:
- 2SD1207S
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2469369-2SD1207S
- Description:
- TRANS NPN 50V 2A MP
- ECAD Model:
-
- Datasheet:
- 2SD1207
ON Semiconductor 2SD1207S technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SD1207S.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 Long Body
- Supplier Device Package3-MP
- Operating Temperature150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max1W
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 1A
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)2A
- Frequency - Transition150MHz
- RoHS StatusROHS3 Compliant
2SD1207S Overview
In this device, the DC current gain is 140 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 1A.Product comes in the supplier's device package 3-MP.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2SD1207S Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the supplier device package of 3-MP
2SD1207S Applications
There are a lot of Rochester Electronics, LLC
2SD1207S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 140 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 1A.Product comes in the supplier's device package 3-MP.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2SD1207S Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the supplier device package of 3-MP
2SD1207S Applications
There are a lot of Rochester Electronics, LLC
2SD1207S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD1207S More Descriptions
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 140 @ 100mA 2V 2A 1W 150MHz
Bipolar Transistor, 50V, 2A, Low VCE(sat) NPN Single MP
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 50V 2A Automotive 3-Pin Case MP
Bipolar Transistor, 50V, 2A, Low VCE(sat) NPN Single MP
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 50V 2A Automotive 3-Pin Case MP
The three parts on the right have similar specifications to 2SD1207S.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusMountTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVoltage - Rated DCCurrent RatingBase Part NumberLead FreeView Compare
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2SD1207SThrough HoleTO-226-3, TO-92-3 Long Body3-MP150°C TJBulkObsolete1 (Unlimited)1WNPN140 @ 100mA 2V100nA ICBO400mV @ 50mA, 1A50V2A150MHzROHS3 Compliant-------------------------------- -
Through HoleSC-72 Formed Leads-150°C TJTape & Box (TB)Obsolete1 (Unlimited)-NPN120 @ 500mA 3V1μA ICBO400mV @ 20mA, 500mA-1A-ROHS3 CompliantThrough HoleSILICON2009e13EAR99TIN SILVER COPPER8541.21.00.95Other Transistors300mW260103R-PSIP-T3Not Qualified1SingleSWITCHING100MHzNPN400mV1A80V100MHz100V5V120----
-
Through Hole3-SIP-150°C TJTape & Box (TB)Obsolete1 (Unlimited)-NPN180 @ 100mA 5V1μA ICBO2V @ 100mA, 1A-2A-ROHS3 CompliantThrough HoleSILICON2006e13EAR99TIN SILVER COPPER8541.29.00.75Other Transistors1W260103R-PSIP-T3Not Qualified1SingleSWITCHING80MHzNPN2V2A120V80MHz120V5V180120V1.5A2SD1857Lead Free
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AATP150°C TJBulkObsolete1 (Unlimited)1WNPN200 @ 500mA 5V1μA ICBO400mV @ 200mA, 2A100V4A180MHzROHS3 Compliant-------------------------------
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