2SC6144SG

ON Semiconductor 2SC6144SG

Part Number:
2SC6144SG
Manufacturer:
ON Semiconductor
Ventron No:
2463341-2SC6144SG
Description:
TRANS NPN 50V 10A TO220F-3FS
ECAD Model:
Datasheet:
2SC6144SG

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Specifications
ON Semiconductor 2SC6144SG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SC6144SG.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    26 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation
    25W
  • Terminal Position
    SINGLE
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    360mV
  • Max Collector Current
    10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 270mA 2V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    360mV @ 300mA, 6A
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    330MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    330MHz
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    200
  • Continuous Collector Current
    10A
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2SC6144SG Overview
DC current gain in this device equals 200 @ 270mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 360mV @ 300mA, 6A.Single BJT transistor is essential to maintain the continuous collector voltage at 10A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 330MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 10A volts.

2SC6144SG Features
the DC current gain for this device is 200 @ 270mA 2V
the vce saturation(Max) is 360mV @ 300mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 330MHz


2SC6144SG Applications
There are a lot of ON Semiconductor
2SC6144SG applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2SC6144SG More Descriptions
Bipolar Transistor, 50V, 10A, Low VCE(sat), NPN TO-220F-3FS
Trans GP BJT NPN 50V 10A 25000mW 3-Pin(3 Tab) TO-220F-3SG Tube
2SC6144SG Series 50 V 10 A 25 W NPN High-Power Silicon Transistor - TO-220
Power Bipolar Transistor, 10A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
10Ã×A 50V 25W 10A 200@270mA2V 330MHz 180mV@6A300mA NPN 150¡Í@(Tj) TO-220F-3FS Bipolar Transistors - BJT ROHS
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:10A; Power Dissipation Pd:25W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:330Mhz; Dc Current Gain Hfe:200Hfe Rohs Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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