ON Semiconductor 2SC6144SG
- Part Number:
- 2SC6144SG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463341-2SC6144SG
- Description:
- TRANS NPN 50V 10A TO220F-3FS
- Datasheet:
- 2SC6144SG
ON Semiconductor 2SC6144SG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SC6144SG.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time26 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation25W
- Terminal PositionSINGLE
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)360mV
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 270mA 2V
- Current - Collector Cutoff (Max)10μA ICBO
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic360mV @ 300mA, 6A
- Collector Emitter Breakdown Voltage50V
- Transition Frequency330MHz
- Max Breakdown Voltage50V
- Frequency - Transition330MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min200
- Continuous Collector Current10A
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC6144SG Overview
DC current gain in this device equals 200 @ 270mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 360mV @ 300mA, 6A.Single BJT transistor is essential to maintain the continuous collector voltage at 10A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 330MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 10A volts.
2SC6144SG Features
the DC current gain for this device is 200 @ 270mA 2V
the vce saturation(Max) is 360mV @ 300mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 330MHz
2SC6144SG Applications
There are a lot of ON Semiconductor
2SC6144SG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 200 @ 270mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 360mV @ 300mA, 6A.Single BJT transistor is essential to maintain the continuous collector voltage at 10A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 330MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 10A volts.
2SC6144SG Features
the DC current gain for this device is 200 @ 270mA 2V
the vce saturation(Max) is 360mV @ 300mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 330MHz
2SC6144SG Applications
There are a lot of ON Semiconductor
2SC6144SG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC6144SG More Descriptions
Bipolar Transistor, 50V, 10A, Low VCE(sat), NPN TO-220F-3FS
Trans GP BJT NPN 50V 10A 25000mW 3-Pin(3 Tab) TO-220F-3SG Tube
2SC6144SG Series 50 V 10 A 25 W NPN High-Power Silicon Transistor - TO-220
Power Bipolar Transistor, 10A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
10Ã×A 50V 25W 10A 200@270mA2V 330MHz 180mV@6A300mA NPN 150¡Í@(Tj) TO-220F-3FS Bipolar Transistors - BJT ROHS
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:10A; Power Dissipation Pd:25W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:330Mhz; Dc Current Gain Hfe:200Hfe Rohs Compliant: Yes
Trans GP BJT NPN 50V 10A 25000mW 3-Pin(3 Tab) TO-220F-3SG Tube
2SC6144SG Series 50 V 10 A 25 W NPN High-Power Silicon Transistor - TO-220
Power Bipolar Transistor, 10A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
10Ã×A 50V 25W 10A 200@270mA2V 330MHz 180mV@6A300mA NPN 150¡Í@(Tj) TO-220F-3FS Bipolar Transistors - BJT ROHS
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:10A; Power Dissipation Pd:25W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:330Mhz; Dc Current Gain Hfe:200Hfe Rohs Compliant: Yes
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