Rohm Semiconductor 2SC5662T2LP
- Part Number:
- 2SC5662T2LP
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2463131-2SC5662T2LP
- Description:
- TRANS NPN 11V 0.05A VMT3
- Datasheet:
- 2SC5662T2LP
Rohm Semiconductor 2SC5662T2LP technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SC5662T2LP.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-723
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin/Copper (Sn/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC11V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating50mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SC5662
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product3.2 GHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)11V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 10mA
- Collector Emitter Breakdown Voltage11V
- Transition Frequency3200MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage11V
- Collector Base Voltage (VCBO)20V
- Emitter Base Voltage (VEBO)3V
- hFE Min56
- Continuous Collector Current50mA
- Highest Frequency BandS B
- Collector-Base Capacitance-Max1.5pF
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC5662T2LP Overview
In this device, the DC current gain is 82 @ 5mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 10mA.A 50mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 3V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3200MHz.Input voltage breakdown is available at 11V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
2SC5662T2LP Features
the DC current gain for this device is 82 @ 5mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz
2SC5662T2LP Applications
There are a lot of ROHM Semiconductor
2SC5662T2LP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 82 @ 5mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 10mA.A 50mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 3V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3200MHz.Input voltage breakdown is available at 11V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
2SC5662T2LP Features
the DC current gain for this device is 82 @ 5mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz
2SC5662T2LP Applications
There are a lot of ROHM Semiconductor
2SC5662T2LP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC5662T2LP More Descriptions
Bipolar (Bjt) Single Transistor, Npn, 11 V, 3.2 Ghz, 150 Mw, 10 Ma, 56 Rohs Compliant: Yes |Rohm 2SC5662T2LP
2SC5662 Series 11 V 50 mA SMT NPN High-Frequency Amplifier Transistor - VMT-3
Transistor VMT3; Polarity:NPN; Collector Emitter Voltage V(br)ceo:11V; Transition Frequency ft:3.2GHz; Power Dissipation Pd:150mW; DC
TRANSISTOR VMT3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 11V; Transition Frequency ft: 3.2GHz; Power Dissipation Pd: 150mW; DC Collector Current: 10mA; DC Current Gain hFE: 56hFE; Transistor Case Style: VMT; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 10mA; Gain Bandwidth ft Typ: 3.2GHz; Hfe Min: 56; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: General Purpose
2SC5662 Series 11 V 50 mA SMT NPN High-Frequency Amplifier Transistor - VMT-3
Transistor VMT3; Polarity:NPN; Collector Emitter Voltage V(br)ceo:11V; Transition Frequency ft:3.2GHz; Power Dissipation Pd:150mW; DC
TRANSISTOR VMT3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 11V; Transition Frequency ft: 3.2GHz; Power Dissipation Pd: 150mW; DC Collector Current: 10mA; DC Current Gain hFE: 56hFE; Transistor Case Style: VMT; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 10mA; Gain Bandwidth ft Typ: 3.2GHz; Hfe Min: 56; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: General Purpose
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