Rohm Semiconductor 2SC5658T2LR

2SC5658T2LR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Continuous collector voltages of 150mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 150mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 150mA volts.

2SC5658T2LR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz


2SC5658T2LR Applications
There are a lot of ROHM Semiconductor
2SC5658T2LR applications of single BJT transistors.


Inverter
Interface
Driver
Muting