Rohm Semiconductor 2SC5658T2LQ

2SC5658T2LQ Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 150mA to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.

2SC5658T2LQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz


2SC5658T2LQ Applications
There are a lot of ROHM Semiconductor
2SC5658T2LQ applications of single BJT transistors.


Inverter
Interface
Driver
Muting