Rohm Semiconductor 2SC5103TLQ
- Part Number:
- 2SC5103TLQ
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3585180-2SC5103TLQ
- Description:
- TRANS NPN 60V 5A SOT-428
- Datasheet:
- 2SC5103
Rohm Semiconductor 2SC5103TLQ technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SC5103TLQ.
- Contact PlatingCopper, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin/Copper (Sn98Cu2)
- HTS Code8541.29.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation1W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating5A
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SC5103
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product80MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1A 2V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 4A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency120MHz
- Max Breakdown Voltage60V
- Frequency - Transition120MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min120
- Continuous Collector Current5A
- Turn Off Time-Max (toff)1800ns
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC5103TLQ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1A 2V.When VCE saturation is 500mV @ 200mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 120MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
2SC5103TLQ Features
the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 120MHz
2SC5103TLQ Applications
There are a lot of ROHM Semiconductor
2SC5103TLQ applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1A 2V.When VCE saturation is 500mV @ 200mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 120MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
2SC5103TLQ Features
the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 120MHz
2SC5103TLQ Applications
There are a lot of ROHM Semiconductor
2SC5103TLQ applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC5103TLQ More Descriptions
2SC5103 Series 60 V 5 A SMT NPN High Speed Switching Transistor - SC-63
Trans GP BJT NPN 60V 5A 1000mW 3-Pin(2 Tab) CPT T/R
TRANSISTOR;NPN;CPT3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:120MHz; Power Dissipation Pd:1W; DC Collector Current:4A; DC Current Gain hFE:120; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-428; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:4A; Gain Bandwidth ft Typ:120MHz; Hfe Min:120; Package / Case:SOT-428; Power Dissipation Pd:1W; Termination Type:SMD; Transistor Type:Switching
Trans GP BJT NPN 60V 5A 1000mW 3-Pin(2 Tab) CPT T/R
TRANSISTOR;NPN;CPT3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:120MHz; Power Dissipation Pd:1W; DC Collector Current:4A; DC Current Gain hFE:120; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-428; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:4A; Gain Bandwidth ft Typ:120MHz; Hfe Min:120; Package / Case:SOT-428; Power Dissipation Pd:1W; Termination Type:SMD; Transistor Type:Switching
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