ON Semiconductor 2SC3649S-TD-E
- Part Number:
- 2SC3649S-TD-E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585257-2SC3649S-TD-E
- Description:
- TRANS NPN 160V 1.5A SOT89-3
- ECAD Model:
-
- Datasheet:
- 2SC3649S-TD-E
ON Semiconductor 2SC3649S-TD-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SC3649S-TD-E.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time9 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Bismuth (Sn/Bi)
- Max Power Dissipation500mW
- Terminal FormFLAT
- Frequency120MHz
- Base Part Number2SC3649
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product120MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 5V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic450mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage160V
- Transition Frequency120MHz
- Collector Emitter Saturation Voltage130mV
- Max Breakdown Voltage160V
- Collector Base Voltage (VCBO)180V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC3649S-TD-E Overview
DC current gain in this device equals 100 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 130mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 160V volts.In extreme cases, the collector current can be as low as 1.5A volts.
2SC3649S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SC3649S-TD-E Applications
There are a lot of ON Semiconductor
2SC3649S-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 130mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 160V volts.In extreme cases, the collector current can be as low as 1.5A volts.
2SC3649S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SC3649S-TD-E Applications
There are a lot of ON Semiconductor
2SC3649S-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC3649S-TD-E More Descriptions
Bipolar Transistor, 160V, 1.5A, Low VCE(sat), (PNP)NPN Single PCP hFE = 140-280
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans GP BJT NPN 160V 1.5A 4-Pin(3 Tab) PCP T/R - Tape and Reel
1Ã×A 160V 500mW 1.5A 120MHz 200mV@500mA50mA NPN 150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 160V, 1.5A, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 120MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 1.5A; DC Current Gain hFE: 140hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans GP BJT NPN 160V 1.5A 4-Pin(3 Tab) PCP T/R - Tape and Reel
1Ã×A 160V 500mW 1.5A 120MHz 200mV@500mA50mA NPN 150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 160V, 1.5A, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 120MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 1.5A; DC Current Gain hFE: 140hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to 2SC3649S-TD-E.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal FormFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMountSubcategoryConfigurationSupplier Device PackageView Compare
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2SC3649S-TD-EACTIVE (Last Updated: 6 days ago)9 WeeksSurface MountTO-243AAYES3SILICON150°C TJTape & Reel (TR)2005e6yesActive1 (Unlimited)3EAR99Tin/Bismuth (Sn/Bi)500mWFLAT120MHz2SC364931Single500mWCOLLECTOR120MHzNPNNPN160V1.5A100 @ 100mA 5V1μA ICBO450mV @ 50mA, 500mA160V120MHz130mV160V180V6VNoROHS3 CompliantLead Free--------- -
--Through HoleSC-71---150°C TJBulk2009--Obsolete1 (Unlimited)--------------NPN--70 @ 500mA 2V1μA ICBO500mV @ 50mA, 1A---------1W80V2A100MHz----
-
-12 WeeksSurface MountTO-236-3, SC-59, SOT-23-3---150°C TJTape & Reel (TR)2014--Active1 (Unlimited)---200mW---------NPNNPN250mV500mA70 @ 100mA 1V100nA ICBO250mV @ 10mA, 100mA50V--50V---RoHS Compliant-200mW--300MHzSurface MountOther TransistorsSingle-
-
--Surface MountTO-236-3, SC-59, SOT-23-3---150°C TJTape & Reel (TR)2003--Obsolete1 (Unlimited)---200mW--2SC3704-------NPN-80mA50 @ 20mA 8V1μA ICBO-10V--10V---RoHS CompliantLead Free200mW10V80mA6GHzSurface Mount--Mini3-G1
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